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ISL9N307AD3ST-VB Product details

Product introduction:

Product Introduction – ISL9N307AD3ST-VB

The ISL9N307AD3ST-VB is a high-performance N-channel MOSFET in a TO252 package, designed for low voltage, high current applications. It has a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 1.7V. The device has an on-resistance (RDS(ON)) of 6mΩ at VGS = 4.5V and 5mΩ at VGS = 10V, and a maximum continuous drain current (ID) of 80A. Using Trench technology, this MOSFET excels in low switching losses and high efficiency, making it suitable for a variety of high-efficiency power and switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 30V 1.7V 80A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 30V 1.7V 80A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 30V 1.7V 80A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 80A
- **Operating technology**: Trench technology
- **Maximum power consumption**: 60W (based on proper heat dissipation conditions)
- **Operating temperature range**: -55°C to 150°C
- **Reverse recovery time (trr)**: 80ns (typical)

Domain and module applications:

Applications and module examples

1. **Power management system**
The ISL9N307AD3ST-VB is ideal for efficient DC-DC converters and switching power supplies, capable of operating at high current and low voltage. Its low on-resistance helps reduce power consumption and improve the overall efficiency of the system, and is widely used in consumer electronics and power modules.

2. **Motor drive and control**
This MOSFET can be used in a variety of motor drive applications, especially in situations where fast switching and high current are required, such as DC motor control and stepper motor drive. Its high efficiency ensures stable motor operation and is suitable for use in automation equipment and robots.

3. **LED drive circuit**
The ISL9N307AD3ST-VB can also be used in LED drive circuits, providing a high-efficiency and low-power solution. Its good thermal performance and high current carrying capacity make it an ideal choice for lamps and lighting systems.

4. **Battery Management System**
In the Battery Management System (BMS), this MOSFET can be used for battery charge and discharge control and monitoring, capable of handling high current without overheating. Suitable for electric vehicles, energy storage systems and portable electronic devices.

Through these application areas, the ISL9N307AD3ST-VB demonstrates its wide applicability and importance as a high-performance N-channel MOSFET.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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