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ISL9N306AS3S-VB Product details
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ISL9N306AS3S-VB is a single N-channel MOSFET in a TO-263 package with a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. The device uses trench technology (Trench) and has extremely low on-resistance of 2.7mΩ (@VGS=4.5V) and 2.4mΩ (@VGS=10V), respectively, and a maximum drain current (ID) of up to 98A. The ISL9N306AS3S-VB is suitable for high-efficiency power switching and power management applications, enabling low-loss and high-efficiency current control.
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ISL9N306AS3S-VB is a single N-channel MOSFET in a TO-263 package with a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. The device uses trench technology (Trench) and has extremely low on-resistance of 2.7mΩ (@VGS=4.5V) and 2.4mΩ (@VGS=10V), respectively, and a maximum drain current (ID) of up to 98A. The ISL9N306AS3S-VB is suitable for high-efficiency power switching and power management applications, enabling low-loss and high-efficiency current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
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- **Package**: TO-263
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage(VDS)**: 30V
- **Gate-Source Voltage(VGS)**: ±20V
- **Threshold Voltage(Vth)**: 1.7V
- **On-Resistance(RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Maximum Drain Current(ID)**: 98A
- **Technology Type**: Trench
- **Power Dissipation**: Up to 70W (depending on heat dissipation conditions)
- **Operating Temperature Range**: -55°C to +150°C
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**
- **Package**: TO-263
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage(VDS)**: 30V
- **Gate-Source Voltage(VGS)**: ±20V
- **Threshold Voltage(Vth)**: 1.7V
- **On-Resistance(RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Maximum Drain Current(ID)**: 98A
- **Technology Type**: Trench
- **Power Dissipation**: Up to 70W (depending on heat dissipation conditions)
- **Operating Temperature Range**: -55°C to +150°C
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Domain and module applications：
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1. **DC-DC Converter**: The ISL9N306AS3S-VB is ideal for use in DC-DC converters, such as buck and boost circuits, due to its low on-resistance and high current carrying capacity, enabling efficient energy conversion and reduced energy loss in power management applications.
2. **Motor Drive**: This MOSFET is suitable for motor control modules, especially in the drive of DC motors and stepper motors, providing fast response and stable control, suitable for motor drives in automation equipment and home appliances.
3. **Power Switch**: In various power switch applications, the device can achieve fast switching operations, suitable for LED lighting, chargers and battery management systems, helping to improve the overall efficiency and reliability of the system.
4. **Consumer Electronics**: The ISL9N306AS3S-VB is also widely used in power management modules for consumer electronic devices, such as smartphones and laptops, to meet the needs of high efficiency and low power consumption and optimize the performance of the device.
Through these applications, the ISL9N306AS3S-VB provides an efficient and reliable solution for modern power management and control schemes.
1. **DC-DC Converter**: The ISL9N306AS3S-VB is ideal for use in DC-DC converters, such as buck and boost circuits, due to its low on-resistance and high current carrying capacity, enabling efficient energy conversion and reduced energy loss in power management applications.
2. **Motor Drive**: This MOSFET is suitable for motor control modules, especially in the drive of DC motors and stepper motors, providing fast response and stable control, suitable for motor drives in automation equipment and home appliances.
3. **Power Switch**: In various power switch applications, the device can achieve fast switching operations, suitable for LED lighting, chargers and battery management systems, helping to improve the overall efficiency and reliability of the system.
4. **Consumer Electronics**: The ISL9N306AS3S-VB is also widely used in power management modules for consumer electronic devices, such as smartphones and laptops, to meet the needs of high efficiency and low power consumption and optimize the performance of the device.
Through these applications, the ISL9N306AS3S-VB provides an efficient and reliable solution for modern power management and control schemes.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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