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ISL9N306AS3ST-VB Product details
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Product Introduction (ISL9N306AS3ST-VB)
The ISL9N306AS3ST-VB is a high-performance N-type power MOSFET in a TO-263 package designed for low-voltage, high-current applications. The device can withstand drain-source voltages (VDS) up to 30V, and its gate-source voltage (VGS) range is ±20V. With its low threshold voltage (Vth = 1.7V) and ultra-low on-resistance (RDS(ON) = 2.7mΩ @ VGS=4.5V and RDS(ON) = 2.4mΩ @ VGS=10V), the MOSFET is able to provide excellent energy efficiency under high current conditions, with a maximum continuous drain current (ID) of up to 98A, making it ideal for applications requiring high performance and low power consumption.
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The ISL9N306AS3ST-VB is a high-performance N-type power MOSFET in a TO-263 package designed for low-voltage, high-current applications. The device can withstand drain-source voltages (VDS) up to 30V, and its gate-source voltage (VGS) range is ±20V. With its low threshold voltage (Vth = 1.7V) and ultra-low on-resistance (RDS(ON) = 2.7mΩ @ VGS=4.5V and RDS(ON) = 2.4mΩ @ VGS=10V), the MOSFET is able to provide excellent energy efficiency under high current conditions, with a maximum continuous drain current (ID) of up to 98A, making it ideal for applications requiring high performance and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package type**: TO-263
2. **Configuration**: Single channel N-type MOSFET
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 98A
8. **Technology type**: Trench technology
9. **Maximum power consumption (Ptot)**: Depending on the heat dissipation conditions, the tolerable power is usually around 50W.
10. **Operating temperature range**: -55°C to +150°C
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1. **Package type**: TO-263
2. **Configuration**: Single channel N-type MOSFET
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 98A
8. **Technology type**: Trench technology
9. **Maximum power consumption (Ptot)**: Depending on the heat dissipation conditions, the tolerable power is usually around 50W.
10. **Operating temperature range**: -55°C to +150°C
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Domain and module applications：
Applications and modules
1. **DC-DC converter**: ISL9N306AS3ST-VB can be widely used in efficient DC-DC converters as the main switching device. Its low on-resistance and high current carrying capacity give it a clear advantage in improving conversion efficiency, especially in consumer electronics and industrial power modules.
2. **Motor drive**: Due to its high current capability, this MOSFET is suitable for DC motor drive and stepper motor control. Its fast switching characteristics can ensure smooth operation of the motor during start-stop, and is widely used in power tools, home appliances and automation equipment.
3. **LED driver**: In LED lighting applications, ISL9N306AS3ST-VB can efficiently drive high-power LEDs to ensure stable and efficient light sources. Its ultra-low on-resistance can reduce energy loss and improve overall system efficiency, making it suitable for commercial and industrial lighting systems.
4. **Battery Management System**: This MOSFET can effectively control the charging and discharging process in battery charging and management applications to ensure battery safety and efficiency. Especially in electric vehicles and renewable energy storage systems, the ISL9N306AS3ST-VB provides an efficient current control solution.
The excellent performance of the ISL9N306AS3ST-VB enables it to perform well in a variety of high-current, low-voltage applications, meeting the needs of different fields.
1. **DC-DC converter**: ISL9N306AS3ST-VB can be widely used in efficient DC-DC converters as the main switching device. Its low on-resistance and high current carrying capacity give it a clear advantage in improving conversion efficiency, especially in consumer electronics and industrial power modules.
2. **Motor drive**: Due to its high current capability, this MOSFET is suitable for DC motor drive and stepper motor control. Its fast switching characteristics can ensure smooth operation of the motor during start-stop, and is widely used in power tools, home appliances and automation equipment.
3. **LED driver**: In LED lighting applications, ISL9N306AS3ST-VB can efficiently drive high-power LEDs to ensure stable and efficient light sources. Its ultra-low on-resistance can reduce energy loss and improve overall system efficiency, making it suitable for commercial and industrial lighting systems.
4. **Battery Management System**: This MOSFET can effectively control the charging and discharging process in battery charging and management applications to ensure battery safety and efficiency. Especially in electric vehicles and renewable energy storage systems, the ISL9N306AS3ST-VB provides an efficient current control solution.
The excellent performance of the ISL9N306AS3ST-VB enables it to perform well in a variety of high-current, low-voltage applications, meeting the needs of different fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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