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ISL9N306AD3S-VB Product details
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ISL9N306AD3S-VB MOSFET Product Introduction
The ISL9N306AD3S-VB is a high-performance single N-channel MOSFET in a TO-252 package, designed for high-efficiency power switching applications. It has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, which can provide stable and reliable performance in a wide range of applications. The on-resistance (RDS(ON)) of this MOSFET is 6mΩ at a gate drive voltage of 4.5V and 5mΩ at 10V, supporting a drain current (ID) of up to 80A. The low threshold voltage (Vth) is 1.7V, which allows it to be turned on smoothly at a lower gate voltage, making it suitable for a variety of low-voltage drive applications. The use of Trench technology optimizes the conductivity and thermal management, ensuring its superior performance in high-efficiency power supply designs.
The ISL9N306AD3S-VB is a high-performance single N-channel MOSFET in a TO-252 package, designed for high-efficiency power switching applications. It has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, which can provide stable and reliable performance in a wide range of applications. The on-resistance (RDS(ON)) of this MOSFET is 6mΩ at a gate drive voltage of 4.5V and 5mΩ at 10V, supporting a drain current (ID) of up to 80A. The low threshold voltage (Vth) is 1.7V, which allows it to be turned on smoothly at a lower gate voltage, making it suitable for a variety of low-voltage drive applications. The use of Trench technology optimizes the conductivity and thermal management, ensuring its superior performance in high-efficiency power supply designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
ISL9N306AD3S-VB MOSFET Detailed parameter description
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 80A
- **Technology type**: Trench
- **Package type**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 80A
- **Technology type**: Trench
Domain and module applications：
ISL9N306AD3S-VB Applicable Fields and Application Modules
1. **Power Management System**: ISL9N306AD3S-VB is widely used in various power management modules, such as DC-DC converters, chargers, and power switches. Its low on-resistance and high current carrying capacity enable it to effectively reduce energy loss in high-efficiency power supply designs, thereby improving system efficiency.
2. **Motor Drive**: In the field of industrial automation, this MOSFET is suitable for motor control and drive systems. Its high current handling capability and fast switching capability make it an ideal choice for driving motors and actuators, meeting the needs of high-power applications.
3. **Automotive Electronics**: ISL9N306AD3S-VB is also suitable for automotive electronic devices, such as battery management systems and electric power steering. Its voltage resistance and high conductivity enable it to provide stable performance in automotive applications and ensure the reliability of electrical systems.
4. **LED Lighting**: This device is suitable for use in high-efficiency LED lighting drivers to ensure that LED modules receive a stable current supply, improve the energy efficiency and service life of the lighting system, and is suitable for home and commercial lighting.
The ISL9N306AD3S-VB is an excellent MOSFET that is widely used in high-efficiency power supplies and control systems, especially for applications with high power and efficiency requirements.
1. **Power Management System**: ISL9N306AD3S-VB is widely used in various power management modules, such as DC-DC converters, chargers, and power switches. Its low on-resistance and high current carrying capacity enable it to effectively reduce energy loss in high-efficiency power supply designs, thereby improving system efficiency.
2. **Motor Drive**: In the field of industrial automation, this MOSFET is suitable for motor control and drive systems. Its high current handling capability and fast switching capability make it an ideal choice for driving motors and actuators, meeting the needs of high-power applications.
3. **Automotive Electronics**: ISL9N306AD3S-VB is also suitable for automotive electronic devices, such as battery management systems and electric power steering. Its voltage resistance and high conductivity enable it to provide stable performance in automotive applications and ensure the reliability of electrical systems.
4. **LED Lighting**: This device is suitable for use in high-efficiency LED lighting drivers to ensure that LED modules receive a stable current supply, improve the energy efficiency and service life of the lighting system, and is suitable for home and commercial lighting.
The ISL9N306AD3S-VB is an excellent MOSFET that is widely used in high-efficiency power supplies and control systems, especially for applications with high power and efficiency requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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