中文
English
ISL9N306AD3ST-VB Product details
Back to previous pageProduct introduction：
Product Introduction
ISL9N306AD3ST-VB is a high-performance N-channel MOSFET in TO252 package, designed for high current and low voltage applications. Its rated drain-source voltage (VDS) is 30V and the maximum drain current (ID) can reach 80A, which can meet the needs of many high-efficiency circuits. Thanks to Trench technology, the device provides ultra-low on-resistance of 6mΩ and 5mΩ respectively at lower gate drive voltages (such as 4.5V and 10V), making it very suitable for high-efficiency power management and switching applications.
ISL9N306AD3ST-VB is a high-performance N-channel MOSFET in TO252 package, designed for high current and low voltage applications. Its rated drain-source voltage (VDS) is 30V and the maximum drain current (ID) can reach 80A, which can meet the needs of many high-efficiency circuits. Thanks to Trench technology, the device provides ultra-low on-resistance of 6mΩ and 5mΩ respectively at lower gate drive voltages (such as 4.5V and 10V), making it very suitable for high-efficiency power management and switching applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench MOSFET
- **Operating temperature range**: -55°C to 150°C
- **Gate charge (Qg)**: 20nC (typical)
- **Body diode reverse recovery time (trr)**: 25ns (typical)
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench MOSFET
- **Operating temperature range**: -55°C to 150°C
- **Gate charge (Qg)**: 20nC (typical)
- **Body diode reverse recovery time (trr)**: 25ns (typical)
Domain and module applications：
Applications and module examples
1. **Power management system**: The ISL9N306AD3ST-VB is ideal for efficient DC-DC converters and switching power supplies, and can achieve excellent energy efficiency under high load conditions, suitable for industrial power supplies and portable devices.
2. **Motor drive**: The high current handling capability of this MOSFET makes it an ideal choice for motor drive control circuits. It is suitable for control applications of brushless motors, DC motors and stepper motors, and is widely used in automation and robotics.
3. **Automotive electronics**: Due to its high temperature resistance and low on-resistance, the ISL9N306AD3ST-VB can be used in automotive power control modules, including light control and electric windows, providing stable and reliable performance.
4. **LED drive**: In LED lighting applications, the device can effectively control current to achieve high brightness and high-efficiency lighting solutions, suitable for commercial and residential lighting systems.
5. **Smart Home Devices**: This MOSFET is suitable for switch control and power management in smart home products, which can improve energy utilization and user experience, such as in smart sockets and home appliance control systems.
1. **Power management system**: The ISL9N306AD3ST-VB is ideal for efficient DC-DC converters and switching power supplies, and can achieve excellent energy efficiency under high load conditions, suitable for industrial power supplies and portable devices.
2. **Motor drive**: The high current handling capability of this MOSFET makes it an ideal choice for motor drive control circuits. It is suitable for control applications of brushless motors, DC motors and stepper motors, and is widely used in automation and robotics.
3. **Automotive electronics**: Due to its high temperature resistance and low on-resistance, the ISL9N306AD3ST-VB can be used in automotive power control modules, including light control and electric windows, providing stable and reliable performance.
4. **LED drive**: In LED lighting applications, the device can effectively control current to achieve high brightness and high-efficiency lighting solutions, suitable for commercial and residential lighting systems.
5. **Smart Home Devices**: This MOSFET is suitable for switch control and power management in smart home products, which can improve energy utilization and user experience, such as in smart sockets and home appliance control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
