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ISD05N50A-VB Product details
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Product Introduction – ISD05N50A-VB
The ISD05N50A-VB is a high voltage N-channel MOSFET in a TO252 package, suitable for applications requiring high voltage and medium current. Its drain-source voltage (VDS) is up to 650V, and the gate-source voltage (VGS) range is ±30V. The threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 1000mΩ at VGS = 10V, and the maximum continuous drain current (ID) is 5A. The device adopts SJ_Multi-EPI technology, has good electrical performance and thermal management characteristics, and is suitable for use in various high-voltage applications.
The ISD05N50A-VB is a high voltage N-channel MOSFET in a TO252 package, suitable for applications requiring high voltage and medium current. Its drain-source voltage (VDS) is up to 650V, and the gate-source voltage (VGS) range is ±30V. The threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 1000mΩ at VGS = 10V, and the maximum continuous drain current (ID) is 5A. The device adopts SJ_Multi-EPI technology, has good electrical performance and thermal management characteristics, and is suitable for use in various high-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Operating technology**: SJ_Multi-EPI
- **Maximum power dissipation**: 40W (based on proper heat dissipation conditions)
- **Operating temperature range**: -55°C to 150°C
- **Reverse recovery time (trr)**: 100ns (typical)
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Operating technology**: SJ_Multi-EPI
- **Maximum power dissipation**: 40W (based on proper heat dissipation conditions)
- **Operating temperature range**: -55°C to 150°C
- **Reverse recovery time (trr)**: 100ns (typical)
Domain and module applications：
Applications and module examples
1. **High-voltage power management**
The ISD05N50A-VB is suitable for high-voltage switching power supplies and DC-DC converters, and can work effectively in high-voltage environments to provide reliable power conversion. Its low on-resistance can reduce power consumption and improve power efficiency, and is widely used in industrial equipment and power supply systems.
2. **Motor drive and control system**
This MOSFET is commonly used in motor drive applications, especially high-voltage DC motor and stepper motor control. Its stable performance and high voltage withstand capability ensure that the motor can operate reliably under harsh conditions, and is suitable for use in automation equipment and robotics.
3. **Photovoltaic inverter**
In solar photovoltaic systems, the ISD05N50A-VB can be used in inverters to convert DC power to AC power. Its high voltage withstand characteristics enable it to handle high voltages from solar panels, and is suitable for residential and commercial photovoltaic power generation systems.
4. **Automotive Electronics and High Voltage Electrical Systems**
The device can be used in automotive electrical systems such as battery management systems (BMS) and electric drive systems. The high voltage capability and good thermal characteristics of the ISD05N50A-VB make it suitable for use in automotive electrical control units and high voltage power modules.
Through the above applications, the ISD05N50A-VB demonstrates its wide applicability and importance as a high-performance high voltage MOSFET.
1. **High-voltage power management**
The ISD05N50A-VB is suitable for high-voltage switching power supplies and DC-DC converters, and can work effectively in high-voltage environments to provide reliable power conversion. Its low on-resistance can reduce power consumption and improve power efficiency, and is widely used in industrial equipment and power supply systems.
2. **Motor drive and control system**
This MOSFET is commonly used in motor drive applications, especially high-voltage DC motor and stepper motor control. Its stable performance and high voltage withstand capability ensure that the motor can operate reliably under harsh conditions, and is suitable for use in automation equipment and robotics.
3. **Photovoltaic inverter**
In solar photovoltaic systems, the ISD05N50A-VB can be used in inverters to convert DC power to AC power. Its high voltage withstand characteristics enable it to handle high voltages from solar panels, and is suitable for residential and commercial photovoltaic power generation systems.
4. **Automotive Electronics and High Voltage Electrical Systems**
The device can be used in automotive electrical systems such as battery management systems (BMS) and electric drive systems. The high voltage capability and good thermal characteristics of the ISD05N50A-VB make it suitable for use in automotive electrical control units and high voltage power modules.
Through the above applications, the ISD05N50A-VB demonstrates its wide applicability and importance as a high-performance high voltage MOSFET.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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