中文
English
IRSF3031L-VB Product details
Back to previous pageProduct introduction：
Product Introduction
IRSF3031L-VB is a high-performance N-channel MOSFET in a SOT223 package, optimized for compact circuit design. With a rated drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 4.5A, it is ideal for low voltage and high current applications. By using Trench technology, this MOSFET can still achieve low on-resistance at a lower gate drive voltage, making it excellent in switching power supply and power management applications. Its gate threshold voltage (Vth=1.7V) and excellent conduction performance make it an ideal choice for many modern electronic devices.
IRSF3031L-VB is a high-performance N-channel MOSFET in a SOT223 package, optimized for compact circuit design. With a rated drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 4.5A, it is ideal for low voltage and high current applications. By using Trench technology, this MOSFET can still achieve low on-resistance at a lower gate drive voltage, making it excellent in switching power supply and power management applications. Its gate threshold voltage (Vth=1.7V) and excellent conduction performance make it an ideal choice for many modern electronic devices.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
- **Package type**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 85mΩ @ VGS = 4.5V
- 76mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4.5A
- **Technology**: Trench MOSFET
- **Operating temperature range**: -55°C to 150°C
- **Gate charge (Qg)**: 26nC (typical)
- **Body diode reverse recovery time (trr)**: 30ns (typical)
- **Package type**: SOT223
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 85mΩ @ VGS = 4.5V
- 76mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4.5A
- **Technology**: Trench MOSFET
- **Operating temperature range**: -55°C to 150°C
- **Gate charge (Qg)**: 26nC (typical)
- **Body diode reverse recovery time (trr)**: 30ns (typical)
Domain and module applications：
Applications and module examples
1. **Power management**: IRSF3031L-VB is ideal for use in DC-DC converters and switching power supplies, where it can reduce power consumption while ensuring efficiency, and is suitable for portable electronic devices and industrial power management systems.
2. **LED drive circuit**: Due to its excellent conduction performance, this MOSFET can effectively drive high-power LEDs, suitable for use in lighting systems and displays, providing stable current and brightness control.
3. **Motor control**: In small motor and brushless motor control applications, the device can withstand 4.5A of current, making it an ideal choice for motor drive circuits, suitable for fields such as robots and home appliances.
4. **Automotive electronics**: The high operating temperature range and reliability of IRSF3031L-VB make it suitable for automotive power management, lighting control and other in-vehicle electronic modules, improving the safety and stability of the system.
5. **Smart home devices**: In smart home applications, MOSFET can be used for switch control and power management to help achieve efficient energy use and device control, and enhance user experience.
1. **Power management**: IRSF3031L-VB is ideal for use in DC-DC converters and switching power supplies, where it can reduce power consumption while ensuring efficiency, and is suitable for portable electronic devices and industrial power management systems.
2. **LED drive circuit**: Due to its excellent conduction performance, this MOSFET can effectively drive high-power LEDs, suitable for use in lighting systems and displays, providing stable current and brightness control.
3. **Motor control**: In small motor and brushless motor control applications, the device can withstand 4.5A of current, making it an ideal choice for motor drive circuits, suitable for fields such as robots and home appliances.
4. **Automotive electronics**: The high operating temperature range and reliability of IRSF3031L-VB make it suitable for automotive power management, lighting control and other in-vehicle electronic modules, improving the safety and stability of the system.
5. **Smart home devices**: In smart home applications, MOSFET can be used for switch control and power management to help achieve efficient energy use and device control, and enhance user experience.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
