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IRLZ44NSTRR-VB Product details
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IRLZ44NSTRR-VB Product Introduction
IRLZ44NSTRR-VB is a single N-channel MOSFET based on advanced trench technology, packaged in TO263. The device has a low on-resistance and is suitable for efficient power management and switching applications, with a maximum drain-source voltage of 60V and a maximum current of 75A. This device has a gate-source voltage tolerance of ±20V, and an on-resistance of 12mΩ and 11mΩ, corresponding to a gate drive voltage of 4.5V and 10V, respectively. Due to its low threshold voltage of 1.7V, it is very suitable for use in low-voltage control circuits, providing a high-efficiency, low-loss solution.
IRLZ44NSTRR-VB is a single N-channel MOSFET based on advanced trench technology, packaged in TO263. The device has a low on-resistance and is suitable for efficient power management and switching applications, with a maximum drain-source voltage of 60V and a maximum current of 75A. This device has a gate-source voltage tolerance of ±20V, and an on-resistance of 12mΩ and 11mΩ, corresponding to a gate drive voltage of 4.5V and 10V, respectively. Due to its low threshold voltage of 1.7V, it is very suitable for use in low-voltage control circuits, providing a high-efficiency, low-loss solution.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
| Parameter name| Parameter value|
|------------------|--------------------------------------|
| Device package| TO263 |
| MOSFET configuration| Single N-channel|
| Drain-source voltage (VDS) | 60V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 12mΩ @ VGS=4.5V, 11mΩ @ VGS=10V |
| Drain current (ID) | 75A |
| Technology| Trench |
| Parameter name| Parameter value|
|------------------|--------------------------------------|
| Device package| TO263 |
| MOSFET configuration| Single N-channel|
| Drain-source voltage (VDS) | 60V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 12mΩ @ VGS=4.5V, 11mΩ @ VGS=10V |
| Drain current (ID) | 75A |
| Technology| Trench |
Domain and module applications：
Application fields and module examples
1. **Motor drive:**
IRLZ44NSTRR-VB is suitable for motor drive modules, such as DC motor controllers. Its high current capability and low on-resistance help reduce power losses, thereby improving system efficiency and performance.
2. **Power management:**
In power modules, this MOSFET can be used in DC-DC converters and synchronous rectification circuits. Due to its low threshold voltage and on-resistance, it can efficiently control switching circuits at low voltages and achieve high conversion efficiency.
3. **Automotive electronics:**
In automotive electronic systems, this device can be applied to battery management, lighting control, and heating systems. Its high current resistance and rugged voltage resistance enable it to work reliably in demanding vehicle environments.
4. **Consumer Electronics:**
In power modules for smart home devices and small appliances, the IRLZ44NSTRR-VB ensures low power consumption and high efficiency, and is suitable for inverters and switching power supplies.
Overall, the IRLZ44NSTRR-VB is a versatile, low-power N-channel MOSFET that is widely used in various modules and systems that require efficient power management.
1. **Motor drive:**
IRLZ44NSTRR-VB is suitable for motor drive modules, such as DC motor controllers. Its high current capability and low on-resistance help reduce power losses, thereby improving system efficiency and performance.
2. **Power management:**
In power modules, this MOSFET can be used in DC-DC converters and synchronous rectification circuits. Due to its low threshold voltage and on-resistance, it can efficiently control switching circuits at low voltages and achieve high conversion efficiency.
3. **Automotive electronics:**
In automotive electronic systems, this device can be applied to battery management, lighting control, and heating systems. Its high current resistance and rugged voltage resistance enable it to work reliably in demanding vehicle environments.
4. **Consumer Electronics:**
In power modules for smart home devices and small appliances, the IRLZ44NSTRR-VB ensures low power consumption and high efficiency, and is suitable for inverters and switching power supplies.
Overall, the IRLZ44NSTRR-VB is a versatile, low-power N-channel MOSFET that is widely used in various modules and systems that require efficient power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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