中文
English
IRLZ34SPBF-VB Product details
Back to previous pageProduct introduction：
IRLZ34SPBF-VB MOSFET Product Introduction
IRLZ34SPBF-VB is a high-performance single N-channel MOSFET in TO263 package, designed based on advanced Trench technology. This MOSFET supports a maximum drain-source voltage (VDS) of 60V, has low on-resistance and high current handling capability, and is very suitable for high-power applications. Its gate threshold voltage (Vth) is 1.7V, and the on-resistance is 32mΩ when the gate drive voltage is 10V. The maximum drain current (ID) is 50A, enabling it to operate stably in situations requiring high current and low power consumption. With its superior performance and stability, the IRLZ34SPBF-VB performs well in a variety of power electronics applications.
IRLZ34SPBF-VB is a high-performance single N-channel MOSFET in TO263 package, designed based on advanced Trench technology. This MOSFET supports a maximum drain-source voltage (VDS) of 60V, has low on-resistance and high current handling capability, and is very suitable for high-power applications. Its gate threshold voltage (Vth) is 1.7V, and the on-resistance is 32mΩ when the gate drive voltage is 10V. The maximum drain current (ID) is 50A, enabling it to operate stably in situations requiring high current and low power consumption. With its superior performance and stability, the IRLZ34SPBF-VB performs well in a variety of power electronics applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IRLZ34SPBF-VB MOSFET Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Maximum power dissipation (PD)**: 60W (depending on heat dissipation)
- **Operating temperature range**: -55°C to 175°C
- **Technology type**: Trench technology
- **Gate charge (Qg)**: 85nC (typical)
- **Reverse recovery time (trr)**: 60ns (typical)
- **Package pins**: Three pins (Drain, Gate, Source)
- **ESD protection**: High ESD protection, suitable for industrial scenarios
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Maximum power dissipation (PD)**: 60W (depending on heat dissipation)
- **Operating temperature range**: -55°C to 175°C
- **Technology type**: Trench technology
- **Gate charge (Qg)**: 85nC (typical)
- **Reverse recovery time (trr)**: 60ns (typical)
- **Package pins**: Three pins (Drain, Gate, Source)
- **ESD protection**: High ESD protection, suitable for industrial scenarios
Domain and module applications：
Applications and module examples
1. **Power conversion**
- The low on-resistance and high current capability of IRLZ34SPBF-VB make it an excellent performer in power conversion modules such as DC-DC converters. Its low on-resistance can reduce energy loss and improve conversion efficiency, making it suitable for high-power, high-efficiency power management systems.
2. **Load switch**
- In load switch applications, such as motor control and load switching circuits, IRLZ34SPBF-VB can provide stable switching performance and low power consumption characteristics. Its high current carrying capacity makes it suitable for applications that require high current switching to ensure reliable control of the load.
3. **Battery management system**
- For battery management systems such as battery protection circuits and charging management, the low on-resistance and high current handling capability of IRLZ34SPBF-VB are very suitable. Its performance can support safe charging and discharging of batteries, optimize battery management processes, and extend battery life.
4. **Industrial Control**
- In the field of industrial control, such as automation control and power regulation systems, IRLZ34SPBF-VB provides an efficient and stable control solution. Its high current capability and low power consumption enable it to cope with harsh working conditions in industrial environments and improve system reliability and performance.
With its high current carrying capacity, low on-resistance and advanced Trench technology, IRLZ34SPBF-VB MOSFET provides superior performance and reliability in power conversion, load switching, battery management and industrial control, and is suitable for a variety of high-power applications.
1. **Power conversion**
- The low on-resistance and high current capability of IRLZ34SPBF-VB make it an excellent performer in power conversion modules such as DC-DC converters. Its low on-resistance can reduce energy loss and improve conversion efficiency, making it suitable for high-power, high-efficiency power management systems.
2. **Load switch**
- In load switch applications, such as motor control and load switching circuits, IRLZ34SPBF-VB can provide stable switching performance and low power consumption characteristics. Its high current carrying capacity makes it suitable for applications that require high current switching to ensure reliable control of the load.
3. **Battery management system**
- For battery management systems such as battery protection circuits and charging management, the low on-resistance and high current handling capability of IRLZ34SPBF-VB are very suitable. Its performance can support safe charging and discharging of batteries, optimize battery management processes, and extend battery life.
4. **Industrial Control**
- In the field of industrial control, such as automation control and power regulation systems, IRLZ34SPBF-VB provides an efficient and stable control solution. Its high current capability and low power consumption enable it to cope with harsh working conditions in industrial environments and improve system reliability and performance.
With its high current carrying capacity, low on-resistance and advanced Trench technology, IRLZ34SPBF-VB MOSFET provides superior performance and reliability in power conversion, load switching, battery management and industrial control, and is suitable for a variety of high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
