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IRLZ34NSTRR-VB Product details

Product introduction:

IRLZ34NSTRR-VB MOSFET Product Introduction

IRLZ34NSTRR-VB is a high-performance N-channel MOSFET in TO263 package. The MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its on-resistance (RDS(ON)) is 32mΩ (at VGS=10V) and has a high maximum drain current (ID) of 50A. Using advanced Trench technology, IRLZ34NSTRR-VB provides excellent switching performance and low conduction losses, suitable for a variety of high current and high voltage applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 1.7V 50A 32mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 1.7V 50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 1.7V 50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
IRLZ34NSTRR-VB Detailed parameter description

- **Package type**: TO263
- **Channel configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Power consumption (Ptot)**: 80W (max)
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Switching speed**: Fast switching times, suitable for high frequency applications

Domain and module applications:

Applications and modules

1. **Power management system**
The low on-resistance and high current handling capability of IRLZ34NSTRR-VB make it ideal for switching circuits in power management systems, such as DC-DC converters and switching power supplies. It provides low loss and high efficiency in high current applications and is widely used in computer power supplies, communication equipment, and high-efficiency power modules.

2. **Electric vehicles and motor drives**
In the motor control system of electric vehicles, IRLZ34NSTRR-VB is able to handle high current and high voltage, making it ideal for motor drives and power conversion modules. Its high current carrying capacity and low on-resistance provide stable current control and high-efficiency conversion for electric vehicles.

3. **Solar inverter**
In solar photovoltaic systems, IRLZ34NSTRR-VB can be used in inverter modules to achieve efficient power conversion. It can work stably under high voltage and high current conditions, improving the energy efficiency and reliability of photovoltaic systems.

4. **Industrial Automation and Load Control**
This MOSFET performs well in power switching and load control applications in industrial automation systems. The high current handling capability and low on-resistance of the IRLZ34NSTRR-VB make it suitable for switch control of various high-power loads, achieving reliable current switching and load management.

5. **LED Lighting System**
In high-power LED lighting systems, the IRLZ34NSTRR-VB can also provide stable current control and efficient switching functions. Its low on-resistance helps reduce energy losses and improve the efficiency and stability of LED lighting.

In summary, the IRLZ34NSTRR-VB is a high-voltage, high-current, high-efficiency MOSFET suitable for power management, electric vehicles, motor drives, solar inverters, industrial automation, and LED lighting. It shows excellent performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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