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IRLZ24STRR-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**IRLZ24STRR-VB** is a single N-channel MOSFET packaged in TO263. This MOSFET uses Trench technology to provide low on-resistance and high current carrying capacity. Its drain-source voltage (VDS) is 60V, the gate drive voltage (VGS) is ±20V, and the threshold voltage (Vth) is 1.7V. At a gate voltage of 10V, its on-resistance is 32mΩ and supports a drain current of up to 50A. These features make the IRLZ24STRR-VB suitable for use in applications that require high performance and high current handling capabilities.
**IRLZ24STRR-VB** is a single N-channel MOSFET packaged in TO263. This MOSFET uses Trench technology to provide low on-resistance and high current carrying capacity. Its drain-source voltage (VDS) is 60V, the gate drive voltage (VGS) is ±20V, and the threshold voltage (Vth) is 1.7V. At a gate voltage of 10V, its on-resistance is 32mΩ and supports a drain current of up to 50A. These features make the IRLZ24STRR-VB suitable for use in applications that require high performance and high current handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description
- **Device model**: IRLZ24STRR-VB
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 50A
- **Maximum power dissipation (Ptot)**: 55W (under ideal heat dissipation conditions)
- **Maximum junction temperature (Tj)**: 175°C
- **Gate charge (Qg)**: 51nC
- **Input capacitance (Ciss)**: 1200pF
- **Switching delay time**:
- Rise time (tr): 40ns
- Fall time (tf): 28ns
- **Technology**: Trench MOSFET
- **Device model**: IRLZ24STRR-VB
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 50A
- **Maximum power dissipation (Ptot)**: 55W (under ideal heat dissipation conditions)
- **Maximum junction temperature (Tj)**: 175°C
- **Gate charge (Qg)**: 51nC
- **Input capacitance (Ciss)**: 1200pF
- **Switching delay time**:
- Rise time (tr): 40ns
- Fall time (tf): 28ns
- **Technology**: Trench MOSFET
Domain and module applications：
3. Application fields and module examples
1. **Switching Power Supply (SMPS)**:
**IRLZ24STRR-VB** is widely used in switching power supply modules, such as AC-DC converters and DC-DC converters. Its low on-resistance (32mΩ @ VGS=10V) reduces power consumption during switching operations and improves the overall efficiency of the system, especially for high current loads.
2. **Electric Vehicles and Battery Management Systems**:
In electric vehicles and battery management systems, **IRLZ24STRR-VB** can be used for battery charge and discharge control and battery balancing. Its high current carrying capacity of 50A and low on-resistance enable it to effectively manage high current charging and discharging processes, thereby improving system reliability and efficiency.
3. **Industrial Motor Drive**:
For industrial motors that require high current drive, **IRLZ24STRR-VB** is an ideal choice. Its high current carrying capacity and low on-resistance enable it to effectively control and drive motors, and is suitable for motor control applications with high efficiency and high stability.
4. **LED lighting and dimming control**:
In LED lighting systems, especially in applications requiring dimming control, this MOSFET can be used as a switching element. Its low on-resistance helps improve system efficiency, reduce power consumption, and extend the life of the LED, making it suitable for use in LED drivers and dimming circuits.
5. **DC-DC converter**:
In various DC-DC converter applications, the low on-resistance and fast switching characteristics of the **IRLZ24STRR-VB** make it suitable for use as a switching element. This helps improve conversion efficiency, reduce energy loss, and optimize the performance of power modules, making it suitable for a wide range of power management applications.
1. **Switching Power Supply (SMPS)**:
**IRLZ24STRR-VB** is widely used in switching power supply modules, such as AC-DC converters and DC-DC converters. Its low on-resistance (32mΩ @ VGS=10V) reduces power consumption during switching operations and improves the overall efficiency of the system, especially for high current loads.
2. **Electric Vehicles and Battery Management Systems**:
In electric vehicles and battery management systems, **IRLZ24STRR-VB** can be used for battery charge and discharge control and battery balancing. Its high current carrying capacity of 50A and low on-resistance enable it to effectively manage high current charging and discharging processes, thereby improving system reliability and efficiency.
3. **Industrial Motor Drive**:
For industrial motors that require high current drive, **IRLZ24STRR-VB** is an ideal choice. Its high current carrying capacity and low on-resistance enable it to effectively control and drive motors, and is suitable for motor control applications with high efficiency and high stability.
4. **LED lighting and dimming control**:
In LED lighting systems, especially in applications requiring dimming control, this MOSFET can be used as a switching element. Its low on-resistance helps improve system efficiency, reduce power consumption, and extend the life of the LED, making it suitable for use in LED drivers and dimming circuits.
5. **DC-DC converter**:
In various DC-DC converter applications, the low on-resistance and fast switching characteristics of the **IRLZ24STRR-VB** make it suitable for use as a switching element. This helps improve conversion efficiency, reduce energy loss, and optimize the performance of power modules, making it suitable for a wide range of power management applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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