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IRLZ24PBF-VB Product details

Product introduction:

IRLZ24PBF-VB MOSFET Product Introduction

IRLZ24PBF-VB is a high-performance single N-channel MOSFET in TO220 package, designed based on advanced Trench technology. This MOSFET supports a drain-source voltage (VDS) of 60V and has a low on-resistance, suitable for medium and high power applications. Its gate threshold voltage (Vth) is 1.7V, and the on-resistance is 72mΩ when the gate drive voltage is 10V. The maximum drain current (ID) is 20A, making it suitable for application scenarios such as power switching and load control. The design features of IRLZ24PBF-VB provide stable and reliable performance, especially in environments requiring high current and low power consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 60V 1.7V 20A 72mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 60V 1.7V 20A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 60V 1.7V 20A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
IRLZ24PBF-VB MOSFET Detailed parameter description

- **Package type**: TO220
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 72mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Maximum power dissipation (PD)**: 60W (depending on heat dissipation)
- **Operating temperature range**: -55°C to 175°C
- **Technology type**: Trench technology
- **Gate charge (Qg)**: 38nC (typical)
- **Reverse recovery time (trr)**: 50ns (typical value)
- **Package pins**: Three pins (Drain, Gate, Source)
- **ESD protection**: High ESD protection, suitable for industrial scenarios

Domain and module applications:

Applications and module examples

1. **Power management**
- The low on-resistance and high current capability of IRLZ24PBF-VB make it very suitable for power management modules such as DC-DC converters and power switches. Its high efficiency and stability can significantly improve the overall efficiency of the power system, reduce energy loss, and ensure the reliable operation of the power management system.

2. **Load switch**
- In load switch applications such as motor drive and load control circuits, IRLZ24PBF-VB provides good performance. Its low on-resistance helps reduce power loss and provides efficient load switching function, suitable for demanding load switching operations.

3. **Battery management**
- In battery management systems, such as battery protection circuits and charging management systems, the high current carrying capacity and low power consumption characteristics of IRLZ24PBF-VB can effectively support the safe and efficient charging/discharging process of the battery, ensuring the stability and reliability of the system.

4. **Industrial Control**
- For industrial control applications, such as automation equipment and control modules, IRLZ24PBF-VB can provide reliable performance and high current carrying capacity. Its design can meet various industrial control occasions with high power and high efficiency requirements, helping to improve the overall stability and reliability of the system.

IRLZ24PBF-VB MOSFET provides efficient and reliable solutions in power management, load switching, battery management and industrial control. Its design enables it to perform well in high current and high power applications, providing robust support for a variety of high-performance applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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