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IRLZ14S-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**IRLZ14S-VB** is a single N-channel MOSFET in TO263 package. This MOSFET has high current carrying capacity and low on-resistance, suitable for high current applications and switching power modules. Its drain-source voltage (VDS) is 60V, gate drive voltage (VGS) is ±20V, and threshold voltage (Vth) is 1.7V. This MOSFET uses Trench technology to achieve higher switching efficiency and lower on-resistance. It is suitable for using a low on-resistance of 32mΩ at a gate voltage of 10V and can support a drain current of up to 50A.
**IRLZ14S-VB** is a single N-channel MOSFET in TO263 package. This MOSFET has high current carrying capacity and low on-resistance, suitable for high current applications and switching power modules. Its drain-source voltage (VDS) is 60V, gate drive voltage (VGS) is ±20V, and threshold voltage (Vth) is 1.7V. This MOSFET uses Trench technology to achieve higher switching efficiency and lower on-resistance. It is suitable for using a low on-resistance of 32mΩ at a gate voltage of 10V and can support a drain current of up to 50A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description
- **Device model**: IRLZ14S-VB
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 50A
- **Maximum power dissipation (Ptot)**: 94W (under ideal heat dissipation conditions)
- **Maximum junction temperature (Tj)**: 175°C
- **Gate charge (Qg)**: 55nC
- **Input capacitance (Ciss)**: 1500pF
- **Switching delay time**:
- Rise time (tr): 50ns
- Fall time (tf): 35ns
- **Technology**: Trench MOSFET
- **Device model**: IRLZ14S-VB
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 50A
- **Maximum power dissipation (Ptot)**: 94W (under ideal heat dissipation conditions)
- **Maximum junction temperature (Tj)**: 175°C
- **Gate charge (Qg)**: 55nC
- **Input capacitance (Ciss)**: 1500pF
- **Switching delay time**:
- Rise time (tr): 50ns
- Fall time (tf): 35ns
- **Technology**: Trench MOSFET
Domain and module applications：
3. Application fields and module examples
1. **Switching Power Supply (SMPS)**:
**IRLZ14S-VB** is suitable for various switching power supply modules, such as AC-DC converters and DC-DC converters. Its low on-resistance (32mΩ @ VGS=10V) ensures high energy efficiency during switching operations, reduces power loss, and improves overall power conversion efficiency.
2. **Electric Vehicles and Battery Management**:
In electric vehicles (EVs) and battery management systems, this MOSFET can be used for battery charge and discharge control and battery balancing management. Due to its high current handling capability (50A) and low on-resistance, it can effectively manage high current charging and discharging processes.
3. **Industrial Motor Drive**:
In industrial motor drive applications, **IRLZ14S-VB** can be used to drive and control motors, especially in situations where high current needs to be handled. Its low on-resistance and high current capability ensure efficient operation and stability of the motor.
4. **High-efficiency lighting systems**:
This MOSFET is also suitable for LED lighting systems, such as LED drivers and dimming systems. The low on-resistance of the MOSFET can reduce power consumption, improve system efficiency, and extend the service life of the LED.
5. **DC-DC converter**:
In DC-DC converter applications, this MOSFET can be used as a switching element to handle high current loads. Its fast switching characteristics (e.g., 50ns rise time) and low on-resistance help improve conversion efficiency and reduce power consumption and heat generation.
1. **Switching Power Supply (SMPS)**:
**IRLZ14S-VB** is suitable for various switching power supply modules, such as AC-DC converters and DC-DC converters. Its low on-resistance (32mΩ @ VGS=10V) ensures high energy efficiency during switching operations, reduces power loss, and improves overall power conversion efficiency.
2. **Electric Vehicles and Battery Management**:
In electric vehicles (EVs) and battery management systems, this MOSFET can be used for battery charge and discharge control and battery balancing management. Due to its high current handling capability (50A) and low on-resistance, it can effectively manage high current charging and discharging processes.
3. **Industrial Motor Drive**:
In industrial motor drive applications, **IRLZ14S-VB** can be used to drive and control motors, especially in situations where high current needs to be handled. Its low on-resistance and high current capability ensure efficient operation and stability of the motor.
4. **High-efficiency lighting systems**:
This MOSFET is also suitable for LED lighting systems, such as LED drivers and dimming systems. The low on-resistance of the MOSFET can reduce power consumption, improve system efficiency, and extend the service life of the LED.
5. **DC-DC converter**:
In DC-DC converter applications, this MOSFET can be used as a switching element to handle high current loads. Its fast switching characteristics (e.g., 50ns rise time) and low on-resistance help improve conversion efficiency and reduce power consumption and heat generation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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