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IRLZ14STRR-VB Product details
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Product Introduction
IRLZ14STRR-VB is a high-performance N-channel MOSFET in TO263 package, designed for applications requiring high current and high efficiency. The drain-source voltage (VDS) of this MOSFET can reach 60V, and the gate-source voltage (VGS) range is ±20V. Its gate threshold voltage (Vth) is 1.7V, and its on-resistance (RDS(ON)) is 35mΩ at a gate-source voltage of 4.5V and 32mΩ at 10V. This device supports drain currents up to 50A and uses Trench technology. It is suitable for circuits requiring low conduction losses and high current handling, and is particularly suitable for power management and load switching applications.
IRLZ14STRR-VB is a high-performance N-channel MOSFET in TO263 package, designed for applications requiring high current and high efficiency. The drain-source voltage (VDS) of this MOSFET can reach 60V, and the gate-source voltage (VGS) range is ±20V. Its gate threshold voltage (Vth) is 1.7V, and its on-resistance (RDS(ON)) is 35mΩ at a gate-source voltage of 4.5V and 32mΩ at 10V. This device supports drain currents up to 50A and uses Trench technology. It is suitable for circuits requiring low conduction losses and high current handling, and is particularly suitable for power management and load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
- **Drain current (ID)**: 50A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
- **Drain current (ID)**: 50A
- **Technology**: Trench technology
Domain and module applications：
Applications and Module Examples
1. **Power Management System**:
The high current carrying capacity and low on-resistance of IRLZ14STRR-VB make it ideal for power management systems such as DC-DC converters and power switches. It can effectively handle high current loads and is suitable for high power power modules to improve energy efficiency and stability.
2. **Load Switch**:
In load switch applications, this MOSFET is able to quickly switch high current loads and provide a low power switching solution. It is widely used in load switch circuits in various electronic devices, such as power tools, motor controllers, and home appliances.
3. **Automotive Electronics**:
IRLZ14STRR-VB is suitable for automotive electronics such as battery management systems (BMS) and on-board power management modules. Its high current handling capability and low on-resistance ensure high efficiency and reliability of automotive electronic systems, especially in electric vehicles and high power automotive electrical systems.
4. **Industrial Control**:
In industrial control systems, this MOSFET can be used to drive loads and control currents, and is suitable for high-power switching applications. It can be used in industrial automation equipment, mechanical control systems, and other high-current load switches and protection circuits to help achieve efficient and reliable control.
IRLZ14STRR-VB has become an important component in power management, load switching, automotive electronics, and industrial control due to its excellent electrical performance and high current capability.
1. **Power Management System**:
The high current carrying capacity and low on-resistance of IRLZ14STRR-VB make it ideal for power management systems such as DC-DC converters and power switches. It can effectively handle high current loads and is suitable for high power power modules to improve energy efficiency and stability.
2. **Load Switch**:
In load switch applications, this MOSFET is able to quickly switch high current loads and provide a low power switching solution. It is widely used in load switch circuits in various electronic devices, such as power tools, motor controllers, and home appliances.
3. **Automotive Electronics**:
IRLZ14STRR-VB is suitable for automotive electronics such as battery management systems (BMS) and on-board power management modules. Its high current handling capability and low on-resistance ensure high efficiency and reliability of automotive electronic systems, especially in electric vehicles and high power automotive electrical systems.
4. **Industrial Control**:
In industrial control systems, this MOSFET can be used to drive loads and control currents, and is suitable for high-power switching applications. It can be used in industrial automation equipment, mechanical control systems, and other high-current load switches and protection circuits to help achieve efficient and reliable control.
IRLZ14STRR-VB has become an important component in power management, load switching, automotive electronics, and industrial control due to its excellent electrical performance and high current capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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