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IRLZ14STRL-VB Product details
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IRLZ14STRL-VB MOSFET Product Introduction
IRLZ14STRL-VB is a high-performance single N-channel MOSFET in a TO263 package, designed based on advanced Trench technology. This MOSFET supports a drain-source voltage (VDS) of 60V and has a low on-resistance, giving it excellent performance in high-current applications. The device has a gate threshold voltage (Vth) of 1.7V, an on-resistance of 35mΩ at a gate drive voltage of 4.5V, and an on-resistance of 32mΩ at 10V. The maximum drain current (ID) is 50A, making it suitable for high-power and high-efficiency conversion applications. Its design features make it particularly suitable for power management and load switching applications that require high conduction capability and low power loss.
IRLZ14STRL-VB is a high-performance single N-channel MOSFET in a TO263 package, designed based on advanced Trench technology. This MOSFET supports a drain-source voltage (VDS) of 60V and has a low on-resistance, giving it excellent performance in high-current applications. The device has a gate threshold voltage (Vth) of 1.7V, an on-resistance of 35mΩ at a gate drive voltage of 4.5V, and an on-resistance of 32mΩ at 10V. The maximum drain current (ID) is 50A, making it suitable for high-power and high-efficiency conversion applications. Its design features make it particularly suitable for power management and load switching applications that require high conduction capability and low power loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IRLZ14STRL-VB MOSFET Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Maximum power dissipation (PD)**: 80W (depending on heat dissipation)
- **Operating temperature range**: -55°C to 175°C
- **Technology type**: Trench technology
- **Gate charge (Qg)**: 30nC (typical)
- **Reverse recovery time (trr)**: 50ns (typical)
- **Package pins**: Three pins (Drain, Gate, Source)
- **ESD protection**: High ESD protection, suitable for industrial scenarios
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Maximum power dissipation (PD)**: 80W (depending on heat dissipation)
- **Operating temperature range**: -55°C to 175°C
- **Technology type**: Trench technology
- **Gate charge (Qg)**: 30nC (typical)
- **Reverse recovery time (trr)**: 50ns (typical)
- **Package pins**: Three pins (Drain, Gate, Source)
- **ESD protection**: High ESD protection, suitable for industrial scenarios
Domain and module applications：
Applications and Module Examples
1. **Power Management**
- The low on-resistance and high current carrying capacity of the IRLZ14STRL-VB make it ideal for use in power management modules such as DC-DC converters and power switches. Its high efficiency and low power loss characteristics can significantly improve the overall performance and stability of the power system.
2. **Load Switch**
- In load switching applications, such as motor drive and power control circuits, the low on-resistance of the IRLZ14STRL-VB can reduce power losses and ensure efficient load switching operation. Its high current capability makes it suitable for handling large current loads and providing stable and reliable switching control.
3. **Battery Management**
- This MOSFET has important applications in battery management systems, especially in battery protection circuits and charging management systems. Its high current carrying capacity and low on-resistance ensure the safe and efficient charging/discharging process of the battery.
4. **Industrial Control**
- In industrial control applications, such as automation equipment and industrial control boards, the high withstand voltage and low power loss characteristics of IRLZ14STRL-VB can effectively improve the stability and reliability of the system, and is suitable for various industrial control occasions with high power and high efficiency requirements.
IRLZ14STRL-VB MOSFET provides excellent characteristics of high efficiency, high withstand voltage and low power loss, making it excellent in power management, load switching, battery management and industrial control. Its design enables it to work stably in high current and high voltage environments, providing reliable support for various high-performance applications.
1. **Power Management**
- The low on-resistance and high current carrying capacity of the IRLZ14STRL-VB make it ideal for use in power management modules such as DC-DC converters and power switches. Its high efficiency and low power loss characteristics can significantly improve the overall performance and stability of the power system.
2. **Load Switch**
- In load switching applications, such as motor drive and power control circuits, the low on-resistance of the IRLZ14STRL-VB can reduce power losses and ensure efficient load switching operation. Its high current capability makes it suitable for handling large current loads and providing stable and reliable switching control.
3. **Battery Management**
- This MOSFET has important applications in battery management systems, especially in battery protection circuits and charging management systems. Its high current carrying capacity and low on-resistance ensure the safe and efficient charging/discharging process of the battery.
4. **Industrial Control**
- In industrial control applications, such as automation equipment and industrial control boards, the high withstand voltage and low power loss characteristics of IRLZ14STRL-VB can effectively improve the stability and reliability of the system, and is suitable for various industrial control occasions with high power and high efficiency requirements.
IRLZ14STRL-VB MOSFET provides excellent characteristics of high efficiency, high withstand voltage and low power loss, making it excellent in power management, load switching, battery management and industrial control. Its design enables it to work stably in high current and high voltage environments, providing reliable support for various high-performance applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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