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IRLWI520A-VB Product details

Product introduction:

1. Product Introduction

**IRLWI520A-VB** is a single N-channel MOSFET in TO263 package with excellent current handling capability and low on-resistance, suitable for various medium and high voltage applications. Its drain-source voltage (VDS) is 100V, gate drive voltage (VGS) is ±20V, and threshold voltage (Vth) is 1.8V. This MOSFET adopts Trench technology to achieve efficient current conduction and switching performance, and can provide a low on-resistance of 100mΩ at a gate voltage of 10V. The maximum drain current (ID) is 20A, which makes it excel in applications such as power conversion and power management.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 100V 1.8V 20A 100mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 100V 1.8V 20A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 100V 1.8V 20A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
II. Detailed parameter description

- **Device model**: IRLWI520A-VB
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 20A
- **Maximum power dissipation (Ptot)**: 60W (under ideal heat dissipation conditions)
- **Maximum junction temperature (Tj)**: 175°C
- **Gate charge (Qg)**: 50nC
- **Input capacitance (Ciss)**: 1200pF
- **Switching delay time**:
- Rise time (tr): 30ns
- Fall time (tf): 25ns
- **Technology**: Trench MOSFET

Domain and module applications:

3. Application fields and module examples

1. **Power management system**:
**IRLWI520A-VB** is ideal for use in power management modules, especially in DC-DC converters and regulators that require efficient current control. Its low on-resistance ensures low losses in power transmission and provides efficient energy conversion in high-voltage environments.

2. **Electric vehicles and charging infrastructure**:
Due to its high current handling capability and 100V drain-source voltage, the device is ideal for battery management systems and charger modules for electric vehicles (EVs). In these systems, MOSFETs can effectively control current, help manage the battery charging and discharging process, and perform well in applications that require high reliability and high efficiency.

3. **Industrial control systems**:
In industrial control equipment, **IRLWI520A-VB** can be used for motor control and power conversion applications. Its high current capability and low on-resistance enable it to operate efficiently under heavy load conditions, making it suitable for motor drives, inverters, and other industrial equipment.

4. **Photovoltaic power generation system**:
In photovoltaic inverters and solar power generation systems, this MOSFET can be used to improve the energy efficiency of the system, optimize energy conversion efficiency through low power consumption and fast switching performance, and ensure the stable operation of the solar power generation system.

5. **Switching power supply (SMPS)**:
**IRLWI520A-VB** is also suitable for switching power supplies, especially in AC-DC or DC-DC conversion circuits, providing efficient current switching and voltage regulation functions, which can help improve power efficiency and reduce heat generation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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