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IRLWI510A-VB Product details
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Product Introduction
IRLWI510A-VB is a single N-channel MOSFET in TO263 package, supporting drain-source voltage (VDS) up to 100V and gate-source voltage (VGS) of ±20V. This device has a gate threshold voltage of 1.8V and an on-resistance (RDS(ON)) of 100mΩ. It can carry a drain current of 20A when VGS=10V and is widely used in high-voltage and high-current power conversion and motor drive applications. It uses Trench technology to provide excellent electrical performance and low power consumption, suitable for various power management and industrial applications with high efficiency requirements.
IRLWI510A-VB is a single N-channel MOSFET in TO263 package, supporting drain-source voltage (VDS) up to 100V and gate-source voltage (VGS) of ±20V. This device has a gate threshold voltage of 1.8V and an on-resistance (RDS(ON)) of 100mΩ. It can carry a drain current of 20A when VGS=10V and is widely used in high-voltage and high-current power conversion and motor drive applications. It uses Trench technology to provide excellent electrical performance and low power consumption, suitable for various power management and industrial applications with high efficiency requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 100mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 100mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Power management and conversion**:
IRLWI510A-VB is suitable for high-voltage DC-DC converters and AC-DC switching power supplies in power management systems. Its high drain-source voltage of 100V allows it to maintain stable operation in applications requiring high-voltage conversion, and is suitable for power management modules in servers, communication equipment, and industrial power supply systems.
2. **Industrial motor drive**:
In industrial motor drive applications, the high current capability and Trench technology of this MOSFET enable it to effectively handle larger current loads, and is suitable for high-power motor controllers, inverters, and servo systems, providing efficient and low-loss motor drive solutions.
3. **Automotive electronics applications**:
Due to its voltage resistance and stable electrical characteristics, IRLWI510A-VB is often used in the automotive electronics field, such as battery management systems (BMS), on-board power supplies, and high-current load switches and protection circuits, and is suitable for load control modules in on-board power systems.
4. **Load Switch and Protection Circuit**:
This MOSFET performs well in high-voltage load switching and overcurrent protection circuits due to its low on-resistance and high current carrying capacity. It can efficiently handle high-current loads and is widely used in protection modules for industrial equipment, data centers, and communication base stations.
IRLWI510A-VB has broad application prospects in high-voltage and high-current applications, especially in power management, industrial motor drives, automotive electronics, and load switches, showing excellent electrical performance and stability.
1. **Power management and conversion**:
IRLWI510A-VB is suitable for high-voltage DC-DC converters and AC-DC switching power supplies in power management systems. Its high drain-source voltage of 100V allows it to maintain stable operation in applications requiring high-voltage conversion, and is suitable for power management modules in servers, communication equipment, and industrial power supply systems.
2. **Industrial motor drive**:
In industrial motor drive applications, the high current capability and Trench technology of this MOSFET enable it to effectively handle larger current loads, and is suitable for high-power motor controllers, inverters, and servo systems, providing efficient and low-loss motor drive solutions.
3. **Automotive electronics applications**:
Due to its voltage resistance and stable electrical characteristics, IRLWI510A-VB is often used in the automotive electronics field, such as battery management systems (BMS), on-board power supplies, and high-current load switches and protection circuits, and is suitable for load control modules in on-board power systems.
4. **Load Switch and Protection Circuit**:
This MOSFET performs well in high-voltage load switching and overcurrent protection circuits due to its low on-resistance and high current carrying capacity. It can efficiently handle high-current loads and is widely used in protection modules for industrial equipment, data centers, and communication base stations.
IRLWI510A-VB has broad application prospects in high-voltage and high-current applications, especially in power management, industrial motor drives, automotive electronics, and load switches, showing excellent electrical performance and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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