IRLU8729PBF-VB Product details
Product introduction:
IRLU8729PBF-VB is a high-efficiency N-channel MOSFET in TO251 package and designed based on advanced Trench technology. Its maximum drain-source voltage is 30V, the gate-source voltage range is ±20V, the gate threshold voltage is 1.7V, and the on-resistance is 9mΩ (VGS=4.5V) and 7mΩ (VGS=10V). The maximum drain current of this MOSFET can reach 50A, which is suitable for applications with high current and high efficiency requirements, such as power management, motor control and load switching. With its excellent turn-on characteristics and high switching speed, IRLU8729PBF-VB is an ideal choice for power conversion and high-frequency applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Package type**: TO251
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Maximum power dissipation (PD)**: 50W (depending on heat dissipation)
- **Operating temperature range**: -55°C to 175°C
- **Technology type**: Trench technology
- **Gate charge (Qg)**: 17nC (typical)
- **Reverse recovery time (trr)**: 40ns (typical)
- **Package pins**: Three pins (Drain, Gate, Source)
- **ESD protection**: Provides high ESD resistance
Domain and module applications:
1. **DC-DC Converters**
- IRLU8729PBF-VB has extremely high efficiency in DC-DC converters, especially for low voltage, high current buck converters. Its low on-resistance can effectively reduce power loss and improve conversion efficiency.
2. **Battery Management System**
- This MOSFET is suitable for use in Battery Management Systems (BMS), especially in protection circuits for lithium-ion batteries, as a load switch. Its fast switching performance and low on-resistance ensure high efficiency and reliability during battery charging and discharging.
3. **Load Switch**
- In load switch applications, the IRLU8729PBF-VB is capable of handling currents up to 50A, making it an ideal choice for switching high power loads such as power tools, motor drives, and high-power LED driver circuits.
4. **Consumer Electronics**
- This MOSFET can also be used in consumer electronics products such as power modules for smartphones, tablets, and laptops. Its low loss characteristics extend battery life and reduce device heat.
With its high current carrying capacity and excellent conduction characteristics, the IRLU8729PBF-VB is suitable for a variety of power conversion and control applications that require high efficiency and low loss. Whether in power management, motor control or consumer electronics, it can provide stable and reliable performance.
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