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IRLU8203PBF-VB Product details
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IRLU8203PBF-VB MOSFET Product Introduction
IRLU8203PBF-VB is a high-performance N-channel MOSFET in a TO251 package, designed for applications requiring high current and low on-resistance. It has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) range of ±20V. The threshold voltage (Vth) of this MOSFET is 1.7V, the on-resistance (RDS(ON)) is 3mΩ at VGS=4.5V and 2mΩ at VGS=10V, and the maximum drain current (ID) can reach 120A. IRLU8203PBF-VB uses Trench technology to provide excellent conduction performance and high efficiency, suitable for a variety of high power density applications.
IRLU8203PBF-VB is a high-performance N-channel MOSFET in a TO251 package, designed for applications requiring high current and low on-resistance. It has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) range of ±20V. The threshold voltage (Vth) of this MOSFET is 1.7V, the on-resistance (RDS(ON)) is 3mΩ at VGS=4.5V and 2mΩ at VGS=10V, and the maximum drain current (ID) can reach 120A. IRLU8203PBF-VB uses Trench technology to provide excellent conduction performance and high efficiency, suitable for a variety of high power density applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 120A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
IRLU8203PBF-VB Detailed parameter description
- **Package type**: TO251
- **Channel configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Package type**: TO251
- **Channel configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
Applications and modules
1. **High-power DC-DC converters**
The low on-resistance and high current handling capability of the IRLU8203PBF-VB make it an excellent performer in high-power DC-DC converters. Its low RDS(ON) can significantly reduce power loss and improve the overall energy efficiency of the system, making it very suitable for computer power supplies, communication equipment, and industrial power conversion modules.
2. **Power management system**
In power management systems, this MOSFET can efficiently manage high-current loads and is suitable for power switches, synchronous rectifiers, and power path control switches. Low on-resistance helps reduce energy loss and improve system efficiency, making it suitable for high-power density power management solutions.
3. **Motor drive circuits**
The high current capability of the IRLU8203PBF-VB makes it an outstanding performer in motor drive circuits. This MOSFET can effectively drive the motor and maintain a low on-resistance when the load changes, reducing heat generation and optimizing motor performance. It is suitable for applications such as electric vehicles and power tools.
4. **Battery Management System**
Due to its high current handling capability and low on-resistance, the IRLU8203PBF-VB is suitable for switching and protecting high-voltage batteries. Low RDS(ON) helps improve battery charging and discharging efficiency and extend battery life. It is widely used in battery management systems for electric vehicles and portable electronic devices.
5. **Consumer Electronics**
The high current and low on-resistance of the IRLU8203PBF-VB make it an ideal choice for a variety of consumer electronics. It can provide efficient power management and improve product performance in space-constrained applications. It is suitable for smartphones, tablets and other high-power density consumer electronic devices.
In summary, IRLU8203PBF-VB is an N-channel MOSFET with high current capability and low on-resistance, suitable for high-power DC-DC converters, power management systems, motor drive circuits, battery management systems and consumer electronics. Its excellent performance makes it an ideal choice in a variety of high-efficiency applications.
1. **High-power DC-DC converters**
The low on-resistance and high current handling capability of the IRLU8203PBF-VB make it an excellent performer in high-power DC-DC converters. Its low RDS(ON) can significantly reduce power loss and improve the overall energy efficiency of the system, making it very suitable for computer power supplies, communication equipment, and industrial power conversion modules.
2. **Power management system**
In power management systems, this MOSFET can efficiently manage high-current loads and is suitable for power switches, synchronous rectifiers, and power path control switches. Low on-resistance helps reduce energy loss and improve system efficiency, making it suitable for high-power density power management solutions.
3. **Motor drive circuits**
The high current capability of the IRLU8203PBF-VB makes it an outstanding performer in motor drive circuits. This MOSFET can effectively drive the motor and maintain a low on-resistance when the load changes, reducing heat generation and optimizing motor performance. It is suitable for applications such as electric vehicles and power tools.
4. **Battery Management System**
Due to its high current handling capability and low on-resistance, the IRLU8203PBF-VB is suitable for switching and protecting high-voltage batteries. Low RDS(ON) helps improve battery charging and discharging efficiency and extend battery life. It is widely used in battery management systems for electric vehicles and portable electronic devices.
5. **Consumer Electronics**
The high current and low on-resistance of the IRLU8203PBF-VB make it an ideal choice for a variety of consumer electronics. It can provide efficient power management and improve product performance in space-constrained applications. It is suitable for smartphones, tablets and other high-power density consumer electronic devices.
In summary, IRLU8203PBF-VB is an N-channel MOSFET with high current capability and low on-resistance, suitable for high-power DC-DC converters, power management systems, motor drive circuits, battery management systems and consumer electronics. Its excellent performance makes it an ideal choice in a variety of high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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