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IRLU8113PBF-VB Product details
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IRLU8113PBF-VB MOSFET Product Introduction
IRLU8113PBF-VB is a high-performance single N-channel power MOSFET in a TO251 package. This MOSFET has extremely low on-resistance and high current capability, supporting up to 100A of drain current (ID), making it ideal for applications that require high current and low power consumption. Its drain-source voltage (VDS) is 30V, and it uses Trench technology to ensure high efficiency and excellent switching performance. The low on-resistance of the IRLU8113PBF-VB enables it to perform well in environments with high power density and high efficiency requirements.
IRLU8113PBF-VB is a high-performance single N-channel power MOSFET in a TO251 package. This MOSFET has extremely low on-resistance and high current capability, supporting up to 100A of drain current (ID), making it ideal for applications that require high current and low power consumption. Its drain-source voltage (VDS) is 30V, and it uses Trench technology to ensure high efficiency and excellent switching performance. The low on-resistance of the IRLU8113PBF-VB enables it to perform well in environments with high power density and high efficiency requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package type**: TO251
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 4.5mΩ @ VGS=4.5V
- 3.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology type**: Trench technology
- **Maximum power consumption**: Pay attention to thermal management in high power applications
- **Operating temperature range**: -55°C to 175°C
- **Package type**: TO251
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 4.5mΩ @ VGS=4.5V
- 3.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology type**: Trench technology
- **Maximum power consumption**: Pay attention to thermal management in high power applications
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
Applications and modules
1. **High-efficiency power management**: The ultra-low on-resistance and high current capability of IRLU8113PBF-VB make it excellent in power management systems. It is suitable for high-efficiency power converters, power switches and power modules, which can effectively reduce energy loss and improve the overall efficiency of the system.
2. **Electric vehicles and industrial drives**: In electric vehicles and industrial drive systems, this MOSFET can handle high current loads and is especially suitable for motor drives and power regulation circuits. Its high current carrying capacity and low on-resistance make it very reliable in applications with high load requirements.
3. **Switching power supplies and DC-DC converters**: IRLU8113PBF-VB performs well in switching power supplies and DC-DC converters. Its low on-resistance and high current capability enable it to efficiently control power switches, reduce power losses and improve power conversion efficiency.
4. **High Current Load Control**: Suitable for scenarios where high current loads need to be controlled, such as high power LED driving and high power relay control. The high current capability and low on-resistance of the IRLU8113PBF-VB make it stable in these applications.
5. **Consumer Electronics**: In consumer electronics, such as battery management systems and high performance computing devices, the high efficiency and low power consumption characteristics of this MOSFET can improve the overall performance and battery life of electronic products.
6. **Computer Power and Server**: In computer power and server applications, the IRLU8113PBF-VB provides stable performance under high load conditions. Its low on-resistance and high current capability are suitable for computer power modules and server power conversion.
Overall, the IRLU8113PBF-VB is a high performance N-channel MOSFET that can handle a drain-source voltage of 30V and a drain current of up to 100A. It is widely used in high-efficiency power management, electric vehicles and industrial drives, switching power supplies, DC-DC converters, high current load control, consumer electronics, computer power supplies and servers, providing excellent switching performance and low power consumption characteristics.
1. **High-efficiency power management**: The ultra-low on-resistance and high current capability of IRLU8113PBF-VB make it excellent in power management systems. It is suitable for high-efficiency power converters, power switches and power modules, which can effectively reduce energy loss and improve the overall efficiency of the system.
2. **Electric vehicles and industrial drives**: In electric vehicles and industrial drive systems, this MOSFET can handle high current loads and is especially suitable for motor drives and power regulation circuits. Its high current carrying capacity and low on-resistance make it very reliable in applications with high load requirements.
3. **Switching power supplies and DC-DC converters**: IRLU8113PBF-VB performs well in switching power supplies and DC-DC converters. Its low on-resistance and high current capability enable it to efficiently control power switches, reduce power losses and improve power conversion efficiency.
4. **High Current Load Control**: Suitable for scenarios where high current loads need to be controlled, such as high power LED driving and high power relay control. The high current capability and low on-resistance of the IRLU8113PBF-VB make it stable in these applications.
5. **Consumer Electronics**: In consumer electronics, such as battery management systems and high performance computing devices, the high efficiency and low power consumption characteristics of this MOSFET can improve the overall performance and battery life of electronic products.
6. **Computer Power and Server**: In computer power and server applications, the IRLU8113PBF-VB provides stable performance under high load conditions. Its low on-resistance and high current capability are suitable for computer power modules and server power conversion.
Overall, the IRLU8113PBF-VB is a high performance N-channel MOSFET that can handle a drain-source voltage of 30V and a drain current of up to 100A. It is widely used in high-efficiency power management, electric vehicles and industrial drives, switching power supplies, DC-DC converters, high current load control, consumer electronics, computer power supplies and servers, providing excellent switching performance and low power consumption characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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