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IRLU3636PBF-VB Product details
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IRLU3636PBF-VB MOSFET Product Introduction
IRLU3636PBF-VB is a high-performance N-channel MOSFET in TO251 package. It is manufactured using Trench technology and has extremely low on-resistance and high current carrying capability, making it an excellent performer in applications requiring high performance and high reliability. The MOSFET has a maximum drain-source voltage of 60V, a gate-source voltage range of ±20V, and a gate threshold voltage of 2.5V. The IRLU3636PBF-VB has an on-resistance of 6mΩ (VGS=4.5V) and can withstand a maximum drain current of 97A. Its design focuses on high power density and high switching speed, making it suitable for a variety of high-efficiency power management and switching applications.
IRLU3636PBF-VB is a high-performance N-channel MOSFET in TO251 package. It is manufactured using Trench technology and has extremely low on-resistance and high current carrying capability, making it an excellent performer in applications requiring high performance and high reliability. The MOSFET has a maximum drain-source voltage of 60V, a gate-source voltage range of ±20V, and a gate threshold voltage of 2.5V. The IRLU3636PBF-VB has an on-resistance of 6mΩ (VGS=4.5V) and can withstand a maximum drain current of 97A. Its design focuses on high power density and high switching speed, making it suitable for a variety of high-efficiency power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
IRLU3636PBF-VB MOSFET Detailed parameter description
- **Package type**: TO251
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 97A
- **Maximum power dissipation (PD)**: 80W (the specific value depends on the heat dissipation conditions)
- **Operating temperature range**: -55°C to 175°C
- **Package pins**: Three pins (Drain, Gate, Source)
- **Technology type**: Trench technology
- **Electrostatic discharge protection**: High ESD resistance
- **Switching speed**: Fast
- **Package type**: TO251
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 97A
- **Maximum power dissipation (PD)**: 80W (the specific value depends on the heat dissipation conditions)
- **Operating temperature range**: -55°C to 175°C
- **Package pins**: Three pins (Drain, Gate, Source)
- **Technology type**: Trench technology
- **Electrostatic discharge protection**: High ESD resistance
- **Switching speed**: Fast
Domain and module applications：
Applications and Module Examples
1. **High-Efficiency Power Switches**
- IRLU3636PBF-VB is suitable for high-efficiency power switching applications such as DC-DC converters and power management systems. Its low on-resistance and high current carrying capability enable it to provide efficient switching performance during power conversion, reduce power losses, and improve overall energy efficiency.
2. **Power Tools and Home Appliances**
- In power tools and home appliances, IRLU3636PBF-VB can be used as a switching element to control motors or power paths. Its high current handling capability and low on-resistance ensure the reliability and stability of the device under high load conditions.
3. **Motor Drive Systems**
- IRLU3636PBF-VB excels in motor drive systems, especially in applications that require high current and high switching speeds. For example, stepper motors and DC motor drivers can take advantage of the low on-resistance and high current capability of this MOSFET to achieve efficient motor control and drive.
4. **Power Amplifier**
- For power amplifiers, especially RF power amplifiers, the IRLU3636PBF-VB provides stable switching performance and low power loss. It is ideal for high-frequency power amplification applications due to its ability to handle high current and high power signals.
The low on-resistance and high current carrying capability of the IRLU3636PBF-VB make it very effective in applications that require efficient power switching and high power handling. Whether in power management, power tools or motor drives, this MOSFET provides excellent performance and reliability.
1. **High-Efficiency Power Switches**
- IRLU3636PBF-VB is suitable for high-efficiency power switching applications such as DC-DC converters and power management systems. Its low on-resistance and high current carrying capability enable it to provide efficient switching performance during power conversion, reduce power losses, and improve overall energy efficiency.
2. **Power Tools and Home Appliances**
- In power tools and home appliances, IRLU3636PBF-VB can be used as a switching element to control motors or power paths. Its high current handling capability and low on-resistance ensure the reliability and stability of the device under high load conditions.
3. **Motor Drive Systems**
- IRLU3636PBF-VB excels in motor drive systems, especially in applications that require high current and high switching speeds. For example, stepper motors and DC motor drivers can take advantage of the low on-resistance and high current capability of this MOSFET to achieve efficient motor control and drive.
4. **Power Amplifier**
- For power amplifiers, especially RF power amplifiers, the IRLU3636PBF-VB provides stable switching performance and low power loss. It is ideal for high-frequency power amplification applications due to its ability to handle high current and high power signals.
The low on-resistance and high current carrying capability of the IRLU3636PBF-VB make it very effective in applications that require efficient power switching and high power handling. Whether in power management, power tools or motor drives, this MOSFET provides excellent performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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