中文
English
IRLU3110ZPBF-VB Product details
Back to previous pageProduct introduction：
IRLU3110ZPBF-VB MOSFET Product Introduction
IRLU3110ZPBF-VB is a high-performance N-channel MOSFET in TO251 package, designed for high voltage and high current applications. Its drain-source voltage (VDS) is up to 100V, and the gate-source voltage (VGS) is ±20V. The threshold voltage (Vth) of this MOSFET is 1.8V, the on-resistance (RDS(ON)) is 12.5mΩ @ VGS=10V, and the drain current (ID) can reach 65A. IRLU3110ZPBF-VB uses Trench technology, providing excellent performance and high efficiency, suitable for a variety of high power density applications.
IRLU3110ZPBF-VB is a high-performance N-channel MOSFET in TO251 package, designed for high voltage and high current applications. Its drain-source voltage (VDS) is up to 100V, and the gate-source voltage (VGS) is ±20V. The threshold voltage (Vth) of this MOSFET is 1.8V, the on-resistance (RDS(ON)) is 12.5mΩ @ VGS=10V, and the drain current (ID) can reach 65A. IRLU3110ZPBF-VB uses Trench technology, providing excellent performance and high efficiency, suitable for a variety of high power density applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | 12.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
IRLU3110ZPBF-VB Detailed parameter description
- **Package type**: TO251
- **Channel configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 12.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 65A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Package type**: TO251
- **Channel configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 12.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 65A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
Applications and Modules
1. **High Power DC-DC Converters**
The high drain-source voltage and low on-resistance of the IRLU3110ZPBF-VB make it very effective in high power DC-DC converters. These features help reduce power consumption and heat in the converter, improving overall energy efficiency, and are particularly suitable for power management modules in computers and communication equipment.
2. **Power Management Systems**
This MOSFET performs well in power management system applications, being able to handle high current loads and maintain low on-resistance. It is suitable for use as a power switch, synchronous rectifier, or power path control switch, improving system reliability and efficiency.
3. **Motor Drive Circuits**
The high current handling capability of the IRLU3110ZPBF-VB makes it suitable for motor drive circuits. These circuits need to handle large currents to drive motors, and the low on-resistance of the MOSFET reduces power losses and optimizes motor performance.
4. **Battery Management System**
In battery management systems, this MOSFET can be used for switching and protecting high-voltage batteries. Low on-resistance helps reduce energy loss and improve the overall efficiency and life of the battery.
5. **Consumer Electronics**
Due to its high current handling capability and compact TO251 package, the IRLU3110ZPBF-VB is also suitable for a variety of consumer electronics. It can provide efficient power management in space-constrained applications, improving product performance and user experience.
In short, the IRLU3110ZPBF-VB is an N-channel MOSFET that performs well in high-voltage and high-current applications. Its low on-resistance and high current handling capability make it an ideal choice in a variety of high-efficiency power management, motor drive and battery management applications.
1. **High Power DC-DC Converters**
The high drain-source voltage and low on-resistance of the IRLU3110ZPBF-VB make it very effective in high power DC-DC converters. These features help reduce power consumption and heat in the converter, improving overall energy efficiency, and are particularly suitable for power management modules in computers and communication equipment.
2. **Power Management Systems**
This MOSFET performs well in power management system applications, being able to handle high current loads and maintain low on-resistance. It is suitable for use as a power switch, synchronous rectifier, or power path control switch, improving system reliability and efficiency.
3. **Motor Drive Circuits**
The high current handling capability of the IRLU3110ZPBF-VB makes it suitable for motor drive circuits. These circuits need to handle large currents to drive motors, and the low on-resistance of the MOSFET reduces power losses and optimizes motor performance.
4. **Battery Management System**
In battery management systems, this MOSFET can be used for switching and protecting high-voltage batteries. Low on-resistance helps reduce energy loss and improve the overall efficiency and life of the battery.
5. **Consumer Electronics**
Due to its high current handling capability and compact TO251 package, the IRLU3110ZPBF-VB is also suitable for a variety of consumer electronics. It can provide efficient power management in space-constrained applications, improving product performance and user experience.
In short, the IRLU3110ZPBF-VB is an N-channel MOSFET that performs well in high-voltage and high-current applications. Its low on-resistance and high current handling capability make it an ideal choice in a variety of high-efficiency power management, motor drive and battery management applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
