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IRLU3103P-VB Product details
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IRLU3103P-VB MOSFET Product Introduction
The IRLU3103P-VB is a high performance, N-channel power MOSFET in a TO251 package. This MOSFET can withstand drain-source voltages (VDS) up to 30V and provide drain currents (ID) up to 50A. Its threshold voltage (Vth) is 1.7V, allowing it to conduct at lower gate-source voltages. Using Trench technology, the IRLU3103P-VB has a low on-resistance and is suitable for applications requiring high efficiency and low power losses.
The IRLU3103P-VB is a high performance, N-channel power MOSFET in a TO251 package. This MOSFET can withstand drain-source voltages (VDS) up to 30V and provide drain currents (ID) up to 50A. Its threshold voltage (Vth) is 1.7V, allowing it to conduct at lower gate-source voltages. Using Trench technology, the IRLU3103P-VB has a low on-resistance and is suitable for applications requiring high efficiency and low power losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package type**: TO251
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology type**: Trench technology
- **Maximum power dissipation**: Suitable for high power applications, but the actual power dissipation should be managed according to the heat dissipation conditions
- **Operating temperature range**: -55°C to 175°C
- **Package type**: TO251
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology type**: Trench technology
- **Maximum power dissipation**: Suitable for high power applications, but the actual power dissipation should be managed according to the heat dissipation conditions
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
Applications and modules
1. **High-efficiency power management**: The low on-resistance and high current capability of IRLU3103P-VB enable it to excel in power management systems. It is suitable for high-efficiency power converters, power switches, and power modules, which can effectively reduce energy losses and improve system efficiency.
2. **Electric vehicles and industrial drives**: In electric vehicles and industrial drive systems, this MOSFET can handle high current loads and provide stable switching performance at 30V. It is suitable for motor drive and power regulation circuits, and can meet applications with high load requirements.
3. **Switching power supplies and DC-DC converters**: IRLU3103P-VB is widely used in switching power supplies and DC-DC converters. Its low on-resistance and high current capability enable it to efficiently control power switches, reduce power losses, and improve the overall efficiency of the system.
4. **High Current Load Control**: In applications that require control of high current loads, such as high power LED driving and high power relay control, the MOSFET’s high current carrying capability and low on-resistance provide reliable performance.
5. **Consumer Electronics**: In consumer electronics, such as battery management systems and high performance computing devices, the IRLU3103P-VB’s high efficiency and low power consumption make it suitable for improving the overall performance and battery life of electronic products.
6. **Computer Power and Server**: In computer power and server applications, the IRLU3103P-VB is able to operate stably under high load conditions. Its low on-resistance and high current capability make it an excellent performer in computer power modules and server power conversion.
In summary, the IRLU3103P-VB is a high performance N-channel MOSFET with a 30V drain-source voltage capability and a 50A drain current. It is widely used in high-efficiency power management, electric vehicles and industrial drives, switching power supplies, DC-DC converters, high current load control and consumer electronics, providing excellent switching performance and low power consumption.
1. **High-efficiency power management**: The low on-resistance and high current capability of IRLU3103P-VB enable it to excel in power management systems. It is suitable for high-efficiency power converters, power switches, and power modules, which can effectively reduce energy losses and improve system efficiency.
2. **Electric vehicles and industrial drives**: In electric vehicles and industrial drive systems, this MOSFET can handle high current loads and provide stable switching performance at 30V. It is suitable for motor drive and power regulation circuits, and can meet applications with high load requirements.
3. **Switching power supplies and DC-DC converters**: IRLU3103P-VB is widely used in switching power supplies and DC-DC converters. Its low on-resistance and high current capability enable it to efficiently control power switches, reduce power losses, and improve the overall efficiency of the system.
4. **High Current Load Control**: In applications that require control of high current loads, such as high power LED driving and high power relay control, the MOSFET’s high current carrying capability and low on-resistance provide reliable performance.
5. **Consumer Electronics**: In consumer electronics, such as battery management systems and high performance computing devices, the IRLU3103P-VB’s high efficiency and low power consumption make it suitable for improving the overall performance and battery life of electronic products.
6. **Computer Power and Server**: In computer power and server applications, the IRLU3103P-VB is able to operate stably under high load conditions. Its low on-resistance and high current capability make it an excellent performer in computer power modules and server power conversion.
In summary, the IRLU3103P-VB is a high performance N-channel MOSFET with a 30V drain-source voltage capability and a 50A drain current. It is widely used in high-efficiency power management, electric vehicles and industrial drives, switching power supplies, DC-DC converters, high current load control and consumer electronics, providing excellent switching performance and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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