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IRLU2905PBF-VB Product details

Product introduction:

1. Product Introduction

**IRLU2905PBF-VB** is a high-performance N-channel MOSFET in TO251 package. This MOSFET is particularly suitable for applications that require medium voltage and high current handling capabilities. Its maximum drain-source voltage (VDS) is 60V, the gate drive voltage range is ±20V, and the threshold voltage (Vth) is 1.7V. The IRLU2905PBF-VB has a relatively low on-resistance (RDS(ON) is 37mΩ@VGS=4.5V and 32mΩ@VGS=10V) and can handle drain currents up to 35A. Designed based on Trench technology, this MOSFET provides efficient switching performance and is ideal for a variety of high-power and high-current electronic applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 60V 1.7V 35A 32mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-N 60V 1.7V 35A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-N 60V 1.7V 35A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-N
2. Detailed parameter description

- **Device model**: IRLU2905PBF-VB
- **Package type**: TO251
- **Polarity**: N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 37mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 35A
- **Maximum power dissipation (Ptot)**: 70W (under good heat dissipation conditions)
- **Maximum junction temperature (Tj)**: 175°C
- **Gate charge (Qg)**: 90nC
- **Input capacitance (Ciss)**: 1650pF
- **Switching delay time**:
- Rise time (tr): 60ns
- Fall time (tf): 50ns

Domain and module applications:

3. Application fields and module examples

The characteristics of **IRLU2905PBF-VB** enable it to perform well in multiple fields and modules. The following are some typical application scenarios:

1. **Power management system**:
In the power management system, the low on-resistance and high current handling capability of IRLU2905PBF-VB make it suitable for switching tubes and synchronous rectifiers of DC-DC converters. This can improve power efficiency and reduce power consumption while ensuring stable voltage and current output.

2. **Motor drive**:
For motor drive applications (such as stepper motors and DC motors), IRLU2905PBF-VB can be used as a switching element in the motor drive circuit or a switching device in the inverter. Its high current handling capability and low on-resistance help achieve efficient motor control and energy transmission.

3. **Automotive Electronics**:
In automotive electronics, especially in battery management systems, on-board DC-DC converters, and power switch modules, the IRLU2905PBF-VB is able to handle the high current and voltage requirements in automotive environments. Its high temperature stability makes it suitable for operation in the harsh environment of automobiles.

4. **Industrial Control**:
In industrial control systems, such as PLCs (Programmable Logic Controllers) and high-power load switches, the high current capability and stability of the IRLU2905PBF-VB make it an ideal choice for these applications. It can provide reliable switching functions and withstand high loads in industrial environments.

5. **Consumer Electronics**:
In consumer electronics, such as battery chargers and power management modules, the high efficiency and stable performance of the IRLU2905PBF-VB can improve the overall performance of the device, extend battery life, and reduce power loss.

In summary, IRLU2905PBF-VB MOSFET is widely used in power management, motor drive, automotive electronics, industrial control and consumer electronics due to its superior current handling capability and low on-resistance, providing efficient and reliable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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