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IRLTS2242TRPBF-VB Product details
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IRLTS2242TRPBF-VB MOSFET Product Introduction
The IRLTS2242TRPBF-VB is a high-performance P-channel MOSFET in a SOT23-6 package. It is designed for low-voltage, high-efficiency power management applications, with a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is -1.7V, and its on-resistance (RDS(ON)) is extremely low, at 54mΩ @ VGS=4.5V and 49mΩ @ VGS=10V, respectively, and its drain current (ID) can reach -4.8A. Using Trench technology, this MOSFET performs well in a variety of high-efficiency applications.
The IRLTS2242TRPBF-VB is a high-performance P-channel MOSFET in a SOT23-6 package. It is designed for low-voltage, high-efficiency power management applications, with a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is -1.7V, and its on-resistance (RDS(ON)) is extremely low, at 54mΩ @ VGS=4.5V and 49mΩ @ VGS=10V, respectively, and its drain current (ID) can reach -4.8A. Using Trench technology, this MOSFET performs well in a variety of high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
IRLTS2242TRPBF-VB Detailed parameter description
- **Package type**: SOT23-6
- **Channel configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Maximum drain current (ID)**: -4.8A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Package type**: SOT23-6
- **Channel configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Maximum drain current (ID)**: -4.8A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
Applications and modules
1. **Power management system**
The low on-resistance of the IRLTS2242TRPBF-VB makes it very effective in power management systems, especially in applications that require high performance and low power consumption. It can be used as a load switch or a power path control switch to optimize the overall power efficiency of the system.
2. **Battery management**
In a battery management system, this MOSFET can effectively control the charging and discharging process of the battery. Due to its low on-resistance, it can reduce energy loss during charging and discharging, thereby improving battery efficiency and life.
3. **Power protection and load switching**
The IRLTS2242TRPBF-VB is suitable for power protection and load switching applications, such as in power modules to protect circuits from overcurrent and short circuits. Its high performance characteristics make it an ideal choice for these applications.
4. **Small Electronic Devices**
Due to its small SOT23-6 package, the IRLTS2242TRPBF-VB is suitable for space-constrained electronic devices such as portable devices and consumer electronics. This package makes it easy to integrate into compact circuit boards without sacrificing performance.
5. **Low Voltage Applications**
This MOSFET is also suitable for various low voltage applications such as low voltage DC-DC converters and low voltage power management systems. Its low on-resistance and high switching speed make it excel in these applications.
In summary, the IRLTS2242TRPBF-VB is a P-channel MOSFET with excellent performance, especially suitable for high-efficiency power management, battery management and various low voltage applications. Its small package and low on-resistance make it an ideal choice in modern electronic designs.
1. **Power management system**
The low on-resistance of the IRLTS2242TRPBF-VB makes it very effective in power management systems, especially in applications that require high performance and low power consumption. It can be used as a load switch or a power path control switch to optimize the overall power efficiency of the system.
2. **Battery management**
In a battery management system, this MOSFET can effectively control the charging and discharging process of the battery. Due to its low on-resistance, it can reduce energy loss during charging and discharging, thereby improving battery efficiency and life.
3. **Power protection and load switching**
The IRLTS2242TRPBF-VB is suitable for power protection and load switching applications, such as in power modules to protect circuits from overcurrent and short circuits. Its high performance characteristics make it an ideal choice for these applications.
4. **Small Electronic Devices**
Due to its small SOT23-6 package, the IRLTS2242TRPBF-VB is suitable for space-constrained electronic devices such as portable devices and consumer electronics. This package makes it easy to integrate into compact circuit boards without sacrificing performance.
5. **Low Voltage Applications**
This MOSFET is also suitable for various low voltage applications such as low voltage DC-DC converters and low voltage power management systems. Its low on-resistance and high switching speed make it excel in these applications.
In summary, the IRLTS2242TRPBF-VB is a P-channel MOSFET with excellent performance, especially suitable for high-efficiency power management, battery management and various low voltage applications. Its small package and low on-resistance make it an ideal choice in modern electronic designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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