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IRLS3034-VB Product details
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IRLS3034-VB MOSFET Product Introduction
The IRLS3034-VB is a high-performance N-channel MOSFET in a TO-263 package, designed for high current, high efficiency applications. It has a drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) of ±20V, and a turn-on threshold voltage (Vth) of 3V. The MOSFET has an extremely low on-resistance (RDS(ON)) of 1.68mΩ @ VGS=4.5V and 1.4mΩ @ VGS=10V, respectively, and can carry a drain current (ID) of up to 280A. The use of Trench technology enables it to perform well in high power and high efficiency applications.
The IRLS3034-VB is a high-performance N-channel MOSFET in a TO-263 package, designed for high current, high efficiency applications. It has a drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) of ±20V, and a turn-on threshold voltage (Vth) of 3V. The MOSFET has an extremely low on-resistance (RDS(ON)) of 1.68mΩ @ VGS=4.5V and 1.4mΩ @ VGS=10V, respectively, and can carry a drain current (ID) of up to 280A. The use of Trench technology enables it to perform well in high power and high efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IRLS3034-VB Detailed parameter description
- **Package type**: TO-263
- **Channel configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 1.68mΩ @ VGS=4.5V
- 1.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 280A
- **Maximum power dissipation**: Power handling capability depends on heat dissipation conditions
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Package type**: TO-263
- **Channel configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 1.68mΩ @ VGS=4.5V
- 1.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 280A
- **Maximum power dissipation**: Power handling capability depends on heat dissipation conditions
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
Applications and modules
1. **Power management system**
In high-efficiency power management systems, the ultra-low on-resistance and high current handling capability of the IRLS3034-VB MOSFET are ideal for use in DC-DC converters. It can optimize power conversion efficiency, reduce system energy loss, and improve overall system performance.
2. **Motor drive**
This MOSFET is suitable for motor drive control applications, such as electric vehicles or industrial automation equipment. Its high current carrying capacity and low on-resistance can provide stable motor drive, ensuring efficient operation and reliability of the equipment.
3. **Battery management and charging system**
In battery management systems and charging systems, the IRLS3034-VB can effectively manage high current charging and discharging processes. Its low RDS(ON) characteristics can reduce power loss, improve charging and discharging efficiency, and extend battery life.
4. **Power Protection and Load Switching**
This MOSFET can also be used in power protection and load switching applications, especially in situations where high current and low power loss are required. Its high current handling capability makes it excellent in high-power load switching.
5. **High Power Applications**
The high current carrying capability and low on-resistance of the IRLS3034-VB make it an ideal choice for high-power applications, such as switching elements in high-power power systems and high-performance computing equipment.
In short, the IRLS3034-VB MOSFET
1. **Power management system**
In high-efficiency power management systems, the ultra-low on-resistance and high current handling capability of the IRLS3034-VB MOSFET are ideal for use in DC-DC converters. It can optimize power conversion efficiency, reduce system energy loss, and improve overall system performance.
2. **Motor drive**
This MOSFET is suitable for motor drive control applications, such as electric vehicles or industrial automation equipment. Its high current carrying capacity and low on-resistance can provide stable motor drive, ensuring efficient operation and reliability of the equipment.
3. **Battery management and charging system**
In battery management systems and charging systems, the IRLS3034-VB can effectively manage high current charging and discharging processes. Its low RDS(ON) characteristics can reduce power loss, improve charging and discharging efficiency, and extend battery life.
4. **Power Protection and Load Switching**
This MOSFET can also be used in power protection and load switching applications, especially in situations where high current and low power loss are required. Its high current handling capability makes it excellent in high-power load switching.
5. **High Power Applications**
The high current carrying capability and low on-resistance of the IRLS3034-VB make it an ideal choice for high-power applications, such as switching elements in high-power power systems and high-performance computing equipment.
In short, the IRLS3034-VB MOSFET
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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