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IRLR8713TRPBF-VB Product details
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Product Introduction
**IRLR8713TRPBF-VB** is a high-efficiency N-Channel MOSFET packaged in TO252. It uses Trench technology, has extremely low on-resistance and excellent current carrying capacity, and is specially developed for circuit designs that require efficient switching and low power consumption. The drain-source voltage (V_DS) of this MOSFET is 30V, and the gate-source voltage (V_GS) is ±20V, which can provide excellent conduction characteristics at low gate drive voltages. The on-resistance (R_DS(ON)) is 3mΩ (@V_GS=4.5V) and 2mΩ (@V_GS=10V), respectively, and the maximum drain current (I_D) is 100A, which is very suitable for applications with high current requirements.
**IRLR8713TRPBF-VB** is a high-efficiency N-Channel MOSFET packaged in TO252. It uses Trench technology, has extremely low on-resistance and excellent current carrying capacity, and is specially developed for circuit designs that require efficient switching and low power consumption. The drain-source voltage (V_DS) of this MOSFET is 30V, and the gate-source voltage (V_GS) is ±20V, which can provide excellent conduction characteristics at low gate drive voltages. The on-resistance (R_DS(ON)) is 3mΩ (@V_GS=4.5V) and 2mΩ (@V_GS=10V), respectively, and the maximum drain current (I_D) is 100A, which is very suitable for applications with high current requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 3mΩ @ V_GS=4.5V
- 2mΩ @ V_GS=10V
- **Maximum drain current (I_D)**: 100A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 3mΩ @ V_GS=4.5V
- 2mΩ @ V_GS=10V
- **Maximum drain current (I_D)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
**IRLR8713TRPBF-VB** is widely used in the following fields due to its high current carrying capability and low on-resistance:
1. **Power Management**:
- In power management applications, especially DC-DC converters and power regulation modules, IRLR8713TRPBF-VB provides high-efficiency power conversion and significantly reduces power consumption. This makes it suitable for high-efficiency power modules such as server power supplies and battery management systems.
2. **Automotive Electronics**:
- In automotive electronics, IRLR8713TRPBF-VB can be used in high-current applications such as power windows, seat adjustment systems, and battery management modules. The high current handling capability of this MOSFET provides stable switching control and maintains excellent performance even in harsh automotive environments.
3. **Power Switching Applications**:
- Due to its high current handling capability, the IRLR8713TRPBF-VB is ideal for high power switching applications such as motor drives, electromagnetic relays, and load switching systems. These modules require fast switching speeds and low conduction losses, and this MOSFET perfectly meets these requirements.
4. **Consumer Electronics**:
- In energy-efficient consumer electronics such as power management modules for smartphones, tablets, and notebooks, the IRLR8713TRPBF-VB improves energy efficiency by reducing on-resistance, reducing heat and extending the life of the device.
**IRLR8713TRPBF-VB** is widely used in the following fields due to its high current carrying capability and low on-resistance:
1. **Power Management**:
- In power management applications, especially DC-DC converters and power regulation modules, IRLR8713TRPBF-VB provides high-efficiency power conversion and significantly reduces power consumption. This makes it suitable for high-efficiency power modules such as server power supplies and battery management systems.
2. **Automotive Electronics**:
- In automotive electronics, IRLR8713TRPBF-VB can be used in high-current applications such as power windows, seat adjustment systems, and battery management modules. The high current handling capability of this MOSFET provides stable switching control and maintains excellent performance even in harsh automotive environments.
3. **Power Switching Applications**:
- Due to its high current handling capability, the IRLR8713TRPBF-VB is ideal for high power switching applications such as motor drives, electromagnetic relays, and load switching systems. These modules require fast switching speeds and low conduction losses, and this MOSFET perfectly meets these requirements.
4. **Consumer Electronics**:
- In energy-efficient consumer electronics such as power management modules for smartphones, tablets, and notebooks, the IRLR8713TRPBF-VB improves energy efficiency by reducing on-resistance, reducing heat and extending the life of the device.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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