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IRLR8503TRPBF-VB Product details

Product introduction:

IRLR8503TRPBF-VB MOSFET Product Introduction

IRLR8503TRPBF-VB is a high-performance N-channel MOSFET in a TO-252 package, designed for low-voltage, high-current applications. Its drain-source voltage (VDS) is 30V, the gate-source voltage (VGS) is ±20V, and the turn-on threshold voltage (Vth) is 1.7V. This MOSFET has an extremely low on-resistance (RDS(ON)), which is 9mΩ @ VGS=4.5V and 7mΩ @ VGS=10V, respectively. The maximum drain current (ID) can reach 70A. It uses Trench technology to improve its switching performance and power efficiency, making it very suitable for high-efficiency power management and high-current control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 30V 1.7V 70A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 30V 1.7V 70A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 30V 1.7V 70A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
IRLR8503TRPBF-VB Detailed parameter description

- **Package type**: TO-252
- **Channel configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 70A
- **Maximum power dissipation**: Power handling capability depends on heat dissipation conditions
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to +150°C

Domain and module applications:

Applications and modules

1. **Battery management system**
In applications such as electric vehicles and renewable energy storage systems, the IRLR8503TRPBF-VB MOSFET can be used to optimize battery management. Its low on-resistance and high current carrying capacity can improve charging and discharging efficiency and reduce losses in battery overcurrent protection.

2. **DC-DC converter**
The device can provide excellent conversion efficiency in DC-DC converters, especially suitable for communication equipment, servers and industrial power systems. Its low-loss conduction performance ensures efficient energy transfer and reduces power losses.

3. **Motor drive control**
In power tools, electric vehicles or industrial automation equipment, the IRLR8503TRPBF-VB MOSFET can be used in efficient motor control modules. Its high current carrying capacity and low conduction losses ensure stable motor operation and reduce heat generation.

4. **Power Management and Load Switching**
In load switching applications, especially high-power loads such as industrial control equipment or data center power management systems, the IRLR8503TRPBF-VB can effectively reduce power switching losses and improve system reliability and power efficiency.

5. **Automotive Electronics Applications**
This MOSFET is suitable for applications such as automotive power management modules, motor drive systems, and vehicle lighting. It has excellent current handling capabilities and low-loss conduction characteristics, and can provide solutions for high-efficiency applications in automotive environments.

The IRLR8503TRPBF-VB is an ideal MOSFET component that can improve system performance in a variety of application scenarios, especially in areas where high efficiency and low loss are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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