IRLR8503TRPBF-VB Product details
Product introduction:
IRLR8503TRPBF-VB is a high-performance N-channel MOSFET in a TO-252 package, designed for low-voltage, high-current applications. Its drain-source voltage (VDS) is 30V, the gate-source voltage (VGS) is ±20V, and the turn-on threshold voltage (Vth) is 1.7V. This MOSFET has an extremely low on-resistance (RDS(ON)), which is 9mΩ @ VGS=4.5V and 7mΩ @ VGS=10V, respectively. The maximum drain current (ID) can reach 70A. It uses Trench technology to improve its switching performance and power efficiency, making it very suitable for high-efficiency power management and high-current control applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO-252
- **Channel configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 70A
- **Maximum power dissipation**: Power handling capability depends on heat dissipation conditions
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to +150°C
Domain and module applications:
1. **Battery management system**
In applications such as electric vehicles and renewable energy storage systems, the IRLR8503TRPBF-VB MOSFET can be used to optimize battery management. Its low on-resistance and high current carrying capacity can improve charging and discharging efficiency and reduce losses in battery overcurrent protection.
2. **DC-DC converter**
The device can provide excellent conversion efficiency in DC-DC converters, especially suitable for communication equipment, servers and industrial power systems. Its low-loss conduction performance ensures efficient energy transfer and reduces power losses.
3. **Motor drive control**
In power tools, electric vehicles or industrial automation equipment, the IRLR8503TRPBF-VB MOSFET can be used in efficient motor control modules. Its high current carrying capacity and low conduction losses ensure stable motor operation and reduce heat generation.
4. **Power Management and Load Switching**
In load switching applications, especially high-power loads such as industrial control equipment or data center power management systems, the IRLR8503TRPBF-VB can effectively reduce power switching losses and improve system reliability and power efficiency.
5. **Automotive Electronics Applications**
This MOSFET is suitable for applications such as automotive power management modules, motor drive systems, and vehicle lighting. It has excellent current handling capabilities and low-loss conduction characteristics, and can provide solutions for high-efficiency applications in automotive environments.
The IRLR8503TRPBF-VB is an ideal MOSFET component that can improve system performance in a variety of application scenarios, especially in areas where high efficiency and low loss are required.
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