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IRLR8503PBF-VB Product details
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Product Introduction
**IRLR8503PBF-VB** is a high-efficiency N-Channel MOSFET with TO252 package type and advanced Trench technology. This MOSFET is designed for low voltage, high current applications, providing extremely low on-resistance (R_DS(ON)) and fast switching speed, improving circuit efficiency. Its maximum drain-source voltage (V_DS) is 30V, and the maximum gate-source voltage (V_GS) is ±20V. It can show low conduction loss under 4.5V and 10V gate drive, which is very suitable for power-intensive applications.
**IRLR8503PBF-VB** is a high-efficiency N-Channel MOSFET with TO252 package type and advanced Trench technology. This MOSFET is designed for low voltage, high current applications, providing extremely low on-resistance (R_DS(ON)) and fast switching speed, improving circuit efficiency. Its maximum drain-source voltage (V_DS) is 30V, and the maximum gate-source voltage (V_GS) is ±20V. It can show low conduction loss under 4.5V and 10V gate drive, which is very suitable for power-intensive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 9mΩ @ V_GS=4.5V
- 7mΩ @ V_GS=10V
- **Maximum drain current (I_D)**: 70A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 9mΩ @ V_GS=4.5V
- 7mΩ @ V_GS=10V
- **Maximum drain current (I_D)**: 70A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Management Systems**:
- The IRLR8503PBF-VB is ideally suited for power management systems, especially high-efficiency DC-DC converters and regulators. Due to its low on-resistance and fast switching capability, it is able to minimize power losses and improve energy efficiency, making it suitable for notebook computers, servers, and other high-efficiency power modules.
2. **Automotive Electronics**:
- This MOSFET is widely used in automotive electronic systems, such as power windows, seat adjusters, and battery management modules. Its high current carrying capability and low R_DS(ON) enable it to withstand the harsh automotive application environment while improving the efficiency and durability of the system.
3. **Motor Drive and Power Switch**:
- The IRLR8503PBF-VB is suitable for motor drive and power switching applications. Its high current handling capability and low loss characteristics enable it to operate under high power loads, such as in motor control, electromagnetic relays, and load switching systems.
4. **Consumer Electronics**:
- In consumer electronics, such as smartphones, tablets and other battery-powered devices, this MOSFET can help improve energy efficiency and extend battery life. Its efficient switching characteristics ensure low power operation of the power management module while maintaining high performance.
1. **Power Management Systems**:
- The IRLR8503PBF-VB is ideally suited for power management systems, especially high-efficiency DC-DC converters and regulators. Due to its low on-resistance and fast switching capability, it is able to minimize power losses and improve energy efficiency, making it suitable for notebook computers, servers, and other high-efficiency power modules.
2. **Automotive Electronics**:
- This MOSFET is widely used in automotive electronic systems, such as power windows, seat adjusters, and battery management modules. Its high current carrying capability and low R_DS(ON) enable it to withstand the harsh automotive application environment while improving the efficiency and durability of the system.
3. **Motor Drive and Power Switch**:
- The IRLR8503PBF-VB is suitable for motor drive and power switching applications. Its high current handling capability and low loss characteristics enable it to operate under high power loads, such as in motor control, electromagnetic relays, and load switching systems.
4. **Consumer Electronics**:
- In consumer electronics, such as smartphones, tablets and other battery-powered devices, this MOSFET can help improve energy efficiency and extend battery life. Its efficient switching characteristics ensure low power operation of the power management module while maintaining high performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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