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IRLR8113VTRPBF-VB Product details
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1. Product Introduction
**IRLR8113VTRPBF-VB** is a high-performance N-channel MOSFET packaged in TO252. It is designed for high current and low voltage applications, with extremely low on-resistance and excellent switching performance. The maximum drain-source voltage (VDS) of this MOSFET is 30V, the gate drive voltage range is ±20V, and the threshold voltage (Vth) is 1.7V. Its on-resistance is 3mΩ at a gate voltage of 4.5V and 2mΩ at a gate voltage of 10V, and it can support a drain current of up to 100A. IRLR8113VTRPBF-VB uses Trench technology, which provides excellent switching speed and low power consumption characteristics, and is very suitable for application scenarios that require high current handling.
**IRLR8113VTRPBF-VB** is a high-performance N-channel MOSFET packaged in TO252. It is designed for high current and low voltage applications, with extremely low on-resistance and excellent switching performance. The maximum drain-source voltage (VDS) of this MOSFET is 30V, the gate drive voltage range is ±20V, and the threshold voltage (Vth) is 1.7V. Its on-resistance is 3mΩ at a gate voltage of 4.5V and 2mΩ at a gate voltage of 10V, and it can support a drain current of up to 100A. IRLR8113VTRPBF-VB uses Trench technology, which provides excellent switching speed and low power consumption characteristics, and is very suitable for application scenarios that require high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Device model**: IRLR8113VTRPBF-VB
- **Package type**: TO252
- **Polarity**: N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
- **Maximum power dissipation**: 3.5W (depending on heat dissipation conditions)
- **Maximum junction temperature (Tj)**: 175°C
- **Gate charge (Qg)**: 150nC
- **Switching delay time**:
- Rise time (tr): 30ns
- Fall time (tf): 35ns
- **Device model**: IRLR8113VTRPBF-VB
- **Package type**: TO252
- **Polarity**: N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
- **Maximum power dissipation**: 3.5W (depending on heat dissipation conditions)
- **Maximum junction temperature (Tj)**: 175°C
- **Gate charge (Qg)**: 150nC
- **Switching delay time**:
- Rise time (tr): 30ns
- Fall time (tf): 35ns
Domain and module applications：
III. Applicable fields and modules
**IRLR8113VTRPBF-VB**'s excellent performance makes it very suitable for a variety of high current and low voltage applications:
1. **Power management system**:
In power management systems, such as DC-DC converters and power switches, the low on-resistance and high current handling capability of IRLR8113VTRPBF-VB can effectively improve conversion efficiency and reduce energy consumption. This makes it an ideal choice for computer power supplies, industrial power modules and high-efficiency power solutions.
2. **Electric vehicles and motor control**:
The high current handling capability and low on-resistance of this MOSFET are very suitable for battery management systems and DC motor drive systems in electric vehicles. It can ensure the efficient operation of electric vehicles under different load conditions while providing stable motor control performance.
3. **LED lighting**:
IRLR8113VTRPBF-VB is also widely used in LED drive circuits. Its low on-resistance can effectively drive high-brightness LED lamps, ensure stable brightness, and improve the energy efficiency of the system. It is suitable for commercial and industrial LED lighting systems to improve the overall performance and reliability of the lighting system.
4. **Power Switching Applications**:
Due to its high current handling capability and low on-resistance, this MOSFET performs well in power switching applications. It can be used in high-power switching circuits such as battery management systems and power converters to ensure high efficiency and stability.
5. **Power Conversion and Inverters**:
In power converters and inverters, the high current handling capability and low on-resistance of the IRLR8113VTRPBF-VB enable it to support high power conversion and stable output performance. This feature makes it suitable for use in high-power inverter and converter systems to improve conversion efficiency and system stability.
In general, the IRLR8113VTRPBF-VB provides a reliable solution in power management, electric vehicles, motor control, LED lighting, power switching and power conversion applications with its low on-resistance, high current carrying capability and excellent switching performance.
**IRLR8113VTRPBF-VB**'s excellent performance makes it very suitable for a variety of high current and low voltage applications:
1. **Power management system**:
In power management systems, such as DC-DC converters and power switches, the low on-resistance and high current handling capability of IRLR8113VTRPBF-VB can effectively improve conversion efficiency and reduce energy consumption. This makes it an ideal choice for computer power supplies, industrial power modules and high-efficiency power solutions.
2. **Electric vehicles and motor control**:
The high current handling capability and low on-resistance of this MOSFET are very suitable for battery management systems and DC motor drive systems in electric vehicles. It can ensure the efficient operation of electric vehicles under different load conditions while providing stable motor control performance.
3. **LED lighting**:
IRLR8113VTRPBF-VB is also widely used in LED drive circuits. Its low on-resistance can effectively drive high-brightness LED lamps, ensure stable brightness, and improve the energy efficiency of the system. It is suitable for commercial and industrial LED lighting systems to improve the overall performance and reliability of the lighting system.
4. **Power Switching Applications**:
Due to its high current handling capability and low on-resistance, this MOSFET performs well in power switching applications. It can be used in high-power switching circuits such as battery management systems and power converters to ensure high efficiency and stability.
5. **Power Conversion and Inverters**:
In power converters and inverters, the high current handling capability and low on-resistance of the IRLR8113VTRPBF-VB enable it to support high power conversion and stable output performance. This feature makes it suitable for use in high-power inverter and converter systems to improve conversion efficiency and system stability.
In general, the IRLR8113VTRPBF-VB provides a reliable solution in power management, electric vehicles, motor control, LED lighting, power switching and power conversion applications with its low on-resistance, high current carrying capability and excellent switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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