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IRLR8113TRRPBF-VB Product details

Product introduction:

Product Introduction
IRLR8113TRRPBF-VB is a high-performance N-channel MOSFET in a TO252 package. It has a drain-source voltage (VDS) of 30V and a drain current (ID) of up to 100A. The gate threshold voltage (Vth) of this MOSFET is 1.7V, and the on-resistance (RDS(ON)) is very low, 3mΩ at a gate-source voltage of 4.5V and 2mΩ at a gate-source voltage of 10V. The IRLR8113TRRPBF-VB uses Trench technology, which provides extremely low on-resistance and high current handling capability, making it very suitable for applications requiring high performance and low power consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 30V 1.7V 100A 2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 30V 1.7V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 30V 1.7V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench technology
- **Power consumption**: Suitable for high current and high-efficiency applications
- **Switching speed**: Suitable for medium and high-frequency switching applications
- **Thermal management**: TO252 package provides good heat dissipation performance, suitable for high power density applications

Domain and module applications:

Applications and module examples

1. **High-efficiency power switch**: IRLR8113TRRPBF-VB is very suitable for use as a high-efficiency power switch, especially in DC-DC converters and power management systems. Its low on-resistance and high current capability ensure efficient switch control during power conversion, reduce power loss, and improve the overall efficiency of the system.

2. **Motor drive system**: In motor drive applications, this MOSFET can be used as a key switching element in the motor control circuit. Its ultra-low RDS(ON) value and high current handling capability enable it to maintain good performance under high load conditions, suitable for medium to high power motor drive systems, and improve the efficiency and stability of the motor.

3. **Battery management system**: IRLR8113TRRPBF-VB can be used as a switching element for battery protection and current control in battery management systems (BMS). Its low RDS(ON) value and high current capability ensure efficient switch control during battery charging and discharging, ensuring the safety and performance of the system.

4. **Automotive Electronic Application**: This MOSFET is also suitable for various automotive electronic systems, such as battery management, motor control, and power switch modules. Due to its low on-resistance and high current handling capability, it can meet the requirements of automotive systems for high performance and reliability, ensuring stable operation of the system under high load conditions.

In summary, IRLR8113TRRPBF-VB is widely used in multiple fields such as high-efficiency power switching, motor drive, battery management, and automotive electronics with its excellent current handling capability, ultra-low on-resistance, and efficient switching performance, providing a powerful switch control solution for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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