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IRLR8113TRPBF-VB Product details
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IRLR8113TRPBF-VB MOSFET Product Introduction
IRLR8113TRPBF-VB is a high-performance single N-channel MOSFET in TO252 package, designed to handle low voltage and high current applications. It has a maximum drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, and a gate threshold voltage (Vth) of 1.7V. The on-resistance (RDS(ON)) of this MOSFET is 3mΩ at VGS=4.5V and 2mΩ at VGS=10V. With its drain current carrying capacity of up to 100A and Trench technology, the IRLR8113TRPBF-VB is suitable for application scenarios requiring high current and low power consumption, and can effectively reduce power loss and improve system efficiency under high current loads.
IRLR8113TRPBF-VB is a high-performance single N-channel MOSFET in TO252 package, designed to handle low voltage and high current applications. It has a maximum drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, and a gate threshold voltage (Vth) of 1.7V. The on-resistance (RDS(ON)) of this MOSFET is 3mΩ at VGS=4.5V and 2mΩ at VGS=10V. With its drain current carrying capacity of up to 100A and Trench technology, the IRLR8113TRPBF-VB is suitable for application scenarios requiring high current and low power consumption, and can effectively reduce power loss and improve system efficiency under high current loads.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
IRLR8113TRPBF-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology type**: Trench technology
- **Maximum power dissipation (PD)**: 3W
- **Operating temperature range**: -55°C to 175°C
- **Package pins**: Three pins (Drain, Gate, Source)
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology type**: Trench technology
- **Maximum power dissipation (PD)**: 3W
- **Operating temperature range**: -55°C to 175°C
- **Package pins**: Three pins (Drain, Gate, Source)
Domain and module applications：
Applications and module examples
1. **High current power switch**
- IRLR8113TRPBF-VB is suitable for high current power switch applications, especially in DC-DC converters and power management systems. Due to its extremely low on-resistance, this MOSFET can significantly reduce power loss, ensure power conversion efficiency and provide stable power output.
2. **Motor drive system**
- In motor drive systems, the high current carrying capacity and low on-resistance of IRLR8113TRPBF-VB make it an ideal switching element. It can efficiently control the motor drive current and is suitable for applications that require high current control, such as power tools and electric vehicle drive systems.
3. **Load switch application**
- This MOSFET performs well in load switch applications and can be used as a high current load switch in home appliances, industrial equipment, etc. Due to its low RDS(ON) characteristics, it can efficiently control high current loads, reduce power consumption and improve system stability.
4. **Power Protection**
- In the power protection module, IRLR8113TRPBF-VB can be used for overcurrent protection switch. It can quickly respond to current changes and provide effective protection to prevent the circuit from being damaged by overcurrent, ensuring safe operation of the system.
IRLR8113TRPBF-VB is a high-performance N-channel MOSFET suitable for high-current and low-voltage applications. With its excellent switching performance and low power consumption, it has wide application potential in power switches, motor drives, load switches, power protection and other fields.
1. **High current power switch**
- IRLR8113TRPBF-VB is suitable for high current power switch applications, especially in DC-DC converters and power management systems. Due to its extremely low on-resistance, this MOSFET can significantly reduce power loss, ensure power conversion efficiency and provide stable power output.
2. **Motor drive system**
- In motor drive systems, the high current carrying capacity and low on-resistance of IRLR8113TRPBF-VB make it an ideal switching element. It can efficiently control the motor drive current and is suitable for applications that require high current control, such as power tools and electric vehicle drive systems.
3. **Load switch application**
- This MOSFET performs well in load switch applications and can be used as a high current load switch in home appliances, industrial equipment, etc. Due to its low RDS(ON) characteristics, it can efficiently control high current loads, reduce power consumption and improve system stability.
4. **Power Protection**
- In the power protection module, IRLR8113TRPBF-VB can be used for overcurrent protection switch. It can quickly respond to current changes and provide effective protection to prevent the circuit from being damaged by overcurrent, ensuring safe operation of the system.
IRLR8113TRPBF-VB is a high-performance N-channel MOSFET suitable for high-current and low-voltage applications. With its excellent switching performance and low power consumption, it has wide application potential in power switches, motor drives, load switches, power protection and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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