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IRLR8113TRLPBF-VB Product details
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IRLR8113TRLPBF-VB Product Introduction
The IRLR8113TRLPBF-VB is a high-performance N-channel MOSFET in a TO252 package and manufactured using Trench technology. It is designed for low-voltage, high-current applications and provides extremely low on-resistance and excellent current handling capabilities. This makes the IRLR8113TRLPBF-VB perform well in circuits that require efficient switching and high current loads, significantly improving the overall efficiency and reliability of the system.
The IRLR8113TRLPBF-VB is a high-performance N-channel MOSFET in a TO252 package and manufactured using Trench technology. It is designed for low-voltage, high-current applications and provides extremely low on-resistance and excellent current handling capabilities. This makes the IRLR8113TRLPBF-VB perform well in circuits that require efficient switching and high current loads, significantly improving the overall efficiency and reliability of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2mΩ @ VGS = 10V
- 3mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench technology
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2mΩ @ VGS = 10V
- 3mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Applications and Module Examples
1. **Power Management and Switching Circuits**:
The IRLR8113TRLPBF-VB is particularly suitable for power management applications such as DC-DC converters and high-efficiency switching power supplies. Its ultra-low on-resistance and high current carrying capacity ensure efficient current switching and minimize power losses. This MOSFET performs well in low-voltage, high-current power modules and can effectively improve the performance and reliability of power systems.
2. **Motor Drive**:
In motor drive applications, the IRLR8113TRLPBF-VB can effectively control the start, stop and speed regulation of the motor. Its high current handling capability and low RDS(ON) ensure the efficiency and stability of the motor control system, and is suitable for various motor drive applications such as DC motor and stepper motor control.
3. **Load Switch**:
This MOSFET is also very suitable for load switching applications, such as lighting control and heating element switching of high power loads. The low on-resistance and high current carrying capacity of IRLR8113TRLPBF-VB ensure efficient load switching, reduce energy loss, and provide reliable switching control, suitable for various high-power load application environments.
4. **Power regulation and protection circuit**:
IRLR8113TRLPBF-VB is suitable for power regulation and protection circuits, such as overcurrent protection and voltage regulation modules. Its extremely low RDS(ON) and high current handling capability enable it to effectively prevent circuit damage from overcurrent or overvoltage, while improving system stability and safety, and protecting circuit components from potential damage.
1. **Power Management and Switching Circuits**:
The IRLR8113TRLPBF-VB is particularly suitable for power management applications such as DC-DC converters and high-efficiency switching power supplies. Its ultra-low on-resistance and high current carrying capacity ensure efficient current switching and minimize power losses. This MOSFET performs well in low-voltage, high-current power modules and can effectively improve the performance and reliability of power systems.
2. **Motor Drive**:
In motor drive applications, the IRLR8113TRLPBF-VB can effectively control the start, stop and speed regulation of the motor. Its high current handling capability and low RDS(ON) ensure the efficiency and stability of the motor control system, and is suitable for various motor drive applications such as DC motor and stepper motor control.
3. **Load Switch**:
This MOSFET is also very suitable for load switching applications, such as lighting control and heating element switching of high power loads. The low on-resistance and high current carrying capacity of IRLR8113TRLPBF-VB ensure efficient load switching, reduce energy loss, and provide reliable switching control, suitable for various high-power load application environments.
4. **Power regulation and protection circuit**:
IRLR8113TRLPBF-VB is suitable for power regulation and protection circuits, such as overcurrent protection and voltage regulation modules. Its extremely low RDS(ON) and high current handling capability enable it to effectively prevent circuit damage from overcurrent or overvoltage, while improving system stability and safety, and protecting circuit components from potential damage.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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