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IRLR8103VTR-VB Product details
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Product Introduction
**IRLR8103VTR-VB** is a high-performance N-Channel MOSFET packaged in TO252. It uses advanced Trench technology, has extremely low on-resistance and ultra-high current carrying capacity, and is very suitable for high-performance and high-reliability circuit design. The maximum drain-source voltage (V_DS) of this MOSFET is 30V, and the gate-source voltage (V_GS) is ±20V, which can provide excellent conduction performance at low gate drive voltage. Its on-resistance (R_DS(ON)) is 3mΩ (@V_GS=4.5V) and 2mΩ (@V_GS=10V), and the maximum drain current (I_D) reaches 100A, making it excellent in high current and low power consumption applications.
**IRLR8103VTR-VB** is a high-performance N-Channel MOSFET packaged in TO252. It uses advanced Trench technology, has extremely low on-resistance and ultra-high current carrying capacity, and is very suitable for high-performance and high-reliability circuit design. The maximum drain-source voltage (V_DS) of this MOSFET is 30V, and the gate-source voltage (V_GS) is ±20V, which can provide excellent conduction performance at low gate drive voltage. Its on-resistance (R_DS(ON)) is 3mΩ (@V_GS=4.5V) and 2mΩ (@V_GS=10V), and the maximum drain current (I_D) reaches 100A, making it excellent in high current and low power consumption applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 3mΩ @ V_GS=4.5V
- 2mΩ @ V_GS=10V
- **Maximum drain current (I_D)**: 100A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 3mΩ @ V_GS=4.5V
- 2mΩ @ V_GS=10V
- **Maximum drain current (I_D)**: 100A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
The excellent performance of **IRLR8103VTR-VB** makes it suitable for multiple fields and modules:
1. **Power management**:
- In the field of power management, especially high current DC-DC converters and power regulation modules, the ultra-low on-resistance and high current capability of this MOSFET significantly improve power conversion efficiency, reduce power consumption and heat generation. This makes it very suitable for high-efficiency power management and battery management systems, improving system stability and overall performance.
2. **Power switch**:
- Due to its high current carrying capacity and low on-resistance, IRLR8103VTR-VB is an ideal choice for power switching applications, such as motor drives, electromagnetic relays, and load switching systems. Its high current handling capability and high conduction efficiency ensure efficient switching operation and load control, adapting to high current requirements in various industrial and consumer electronics applications.
3. **Automotive Electronics**:
- In automotive electronic systems, such as battery management systems, power windows, seat adjusters, and other high-current applications, the IRLR8103VTR-VB provides reliable switching control and is capable of handling high current loads. Its high current handling capability and low on-resistance enable stable operation in the automotive environment, improving the performance and durability of automotive electronic devices.
4. **Consumer Electronics**:
- In consumer electronics, such as smartphones, tablets, and home appliances, the IRLR8103VTR-VB's low on-resistance can improve energy efficiency and reduce power consumption. Especially in applications with strict requirements for power management, this MOSFET can effectively improve the operating efficiency of the device, extend battery life, and overall service life.
The excellent performance of **IRLR8103VTR-VB** makes it suitable for multiple fields and modules:
1. **Power management**:
- In the field of power management, especially high current DC-DC converters and power regulation modules, the ultra-low on-resistance and high current capability of this MOSFET significantly improve power conversion efficiency, reduce power consumption and heat generation. This makes it very suitable for high-efficiency power management and battery management systems, improving system stability and overall performance.
2. **Power switch**:
- Due to its high current carrying capacity and low on-resistance, IRLR8103VTR-VB is an ideal choice for power switching applications, such as motor drives, electromagnetic relays, and load switching systems. Its high current handling capability and high conduction efficiency ensure efficient switching operation and load control, adapting to high current requirements in various industrial and consumer electronics applications.
3. **Automotive Electronics**:
- In automotive electronic systems, such as battery management systems, power windows, seat adjusters, and other high-current applications, the IRLR8103VTR-VB provides reliable switching control and is capable of handling high current loads. Its high current handling capability and low on-resistance enable stable operation in the automotive environment, improving the performance and durability of automotive electronic devices.
4. **Consumer Electronics**:
- In consumer electronics, such as smartphones, tablets, and home appliances, the IRLR8103VTR-VB's low on-resistance can improve energy efficiency and reduce power consumption. Especially in applications with strict requirements for power management, this MOSFET can effectively improve the operating efficiency of the device, extend battery life, and overall service life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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