IRLR8103TRR-VB Product details
Product introduction:
The IRLR8103TRR-VB is a high-performance N-channel MOSFET in a TO-252 package, designed for medium-to-high current and medium-to-low voltage applications. Its maximum drain-source voltage (VDS) is 30V, and the gate drive voltage (VGS) can reach ±20V. The threshold voltage (Vth) of this MOSFET is 1.7V, and it can be turned on reliably at a lower gate voltage. The on-resistance (RDS(ON)) of the IRLR8103TRR-VB is 3mΩ @ VGS=4.5V and 2mΩ @ VGS=10V, supporting a continuous drain current (ID) of up to 100A. It uses Trench technology to provide extremely low on-resistance and excellent switching performance, which is very suitable for high-power and high-frequency applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO-252
- **Channel configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 100A
- **Power dissipation (PD)**: 3W (estimated, the specific value depends on the heat dissipation conditions)
- **Technology type**: Trench technology
- **Switching frequency**: Suitable for high-frequency switching applications
- **Junction temperature range**: -55°C to +150°C
Domain and module applications:
1. **Power management system**
The extremely low on-resistance and high current capability of IRLR8103TRR-VB make it very suitable for efficient power conversion in power management systems. It can be used for the control of power modules, power switches and high current loads, significantly improving the efficiency and stability of the power system.
2. **DC-DC converter**
In DC-DC converters, the low RDS(ON) and high current carrying capacity of this MOSFET enable it to effectively reduce power losses. It is suitable for high-efficiency DC-DC converter designs such as electric vehicle power supplies, industrial power supplies and communication power supplies.
3. **Motor drive**
The high current handling capability of IRLR8103TRR-VB makes it very suitable for motor drive applications. In power tools, electric vehicles and automation equipment, it can stably drive motors, provide powerful control capabilities and efficient energy conversion.
4. **Battery Management System**
Due to its high current capability and low on-resistance, the IRLR8103TRR-VB excels in battery management systems. It can be used for battery charge and discharge control, overcurrent protection, and power conversion, and is widely used in electric vehicle batteries, energy storage systems, and renewable energy systems.
5. **Automotive Electronics**
The IRLR8103TRR-VB is also suitable for the automotive electronics field and can meet the high current load requirements in automobiles. It can be used for automotive battery management, power switching, lighting control, and other automotive electronic modules to improve system reliability and performance.
The excellent performance of the IRLR8103TRR-VB enables it to perform well in high current and medium and low voltage applications, making it an indispensable switching element in a variety of electronic devices and power management systems.
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