IRLR7833TRPBF-VB Product details
Product introduction:
IRLR7833TRPBF-VB is a high-performance N-channel power MOSFET in TO252 package. This MOSFET is designed for high current and low on-resistance applications, with a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of up to 120A. Its threshold voltage (Vth) is 1.7V, which is suitable for applications with low gate-source voltage. IRLR7833TRPBF-VB uses Trench technology with extremely low on-resistance, which can provide excellent switching performance and thermal management capabilities in high current environments.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology type**: Trench technology
- **Maximum power consumption**: Power consumption should be properly managed according to actual heat dissipation design
- **Operating temperature range**: -55°C to 175°C
Domain and module applications:
1. **High current load switch**: The high drain current capability and low on-resistance of the IRLR7833TRPBF-VB make it ideal for high current load switch applications. It can efficiently control high current loads such as motor drives, power switches, and relay drives, providing reliable performance and low power consumption.
2. **Power management and DC-DC converter**: In power management systems and DC-DC converters, this MOSFET can provide low on-resistance and high current handling capability, improve power conversion efficiency, and reduce power consumption and heat. This makes it excellent in applications that require high-efficiency power conversion.
3. **LED drive circuit**: The IRLR7833TRPBF-VB can be used in high-power LED drive circuits. Its low on-resistance and high current capability ensure the stability and high efficiency of the LED system, and is suitable for LED applications that require high brightness and high current.
4. **Automotive Electronic Systems**: In automotive electronic applications, the high current handling capability of this MOSFET makes it suitable for systems such as battery management, power distribution, and power window control. Its reliability and high efficiency provide stable performance in automotive electrical systems.
5. **Industrial Control and Automation**: In industrial control and automation systems, the high current capability and excellent switching performance of the IRLR7833TRPBF-VB make it an ideal choice for motor control and other high current load switches. It can improve the efficiency and reliability of the system and adapt to the high load requirements in industrial environments.
In general, the IRLR7833TRPBF-VB is an N-channel MOSFET that performs well in high current and low on-resistance applications. Its excellent performance makes it widely used in many fields such as load switching, power management, LED driving, automotive electronics, and industrial control.
Technical support:
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