IRLR7833CTRLPBF-VB Product details
Product introduction:
The IRLR7833CTRLPBF-VB is a high performance single N-channel MOSFET in a TO252 package and manufactured using advanced Trench technology. The MOSFET has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.7V, allowing it to operate effectively at low gate drive voltages. The IRLR7833CTRLPBF-VB has an on-resistance of 2mΩ at VGS = 10V and 3mΩ at VGS = 4.5V, and is capable of carrying up to 120A of continuous drain current (ID). Its low on-resistance and high current handling capability make it suitable for applications requiring high efficiency and high power handling.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Model:** IRLR7833CTRLPBF-VB
- **Package Type:** TO252
- **Channel Configuration:** Single N-Channel
- **Drain-Source Voltage (VDS):** 30V
- **Gate-Source Voltage (VGS):** ±20V
- **Threshold Voltage (Vth):** 1.7V
- **On-Resistance (RDS(ON)):** 2mΩ @ VGS = 10V
- **On-Resistance (RDS(ON)):** 3mΩ @ VGS = 4.5V
- **Continuous Drain Current (ID):** 120A
- **Technology:** Trench
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Domain and module applications:
1. **High-efficiency power management:**
IRLR7833CTRLPBF-VB is suitable for high-efficiency power management systems such as DC-DC converters. In these applications, the low on-resistance of the MOSFET can significantly reduce switching losses and improve the energy efficiency of the system. In addition, due to its high current handling capability, it can operate stably under high load conditions.
2. **Electric vehicle drive:**
In the motor drive system of electric vehicles, this MOSFET can be used as a high-current switch. Due to its low on-resistance and high current carrying capacity, it can effectively control the start and operation of the motor while reducing power losses and improving the overall efficiency of the electric vehicle.
3. **Industrial automation:**
In industrial automation equipment, such as industrial robots and high-power motor control systems, the IRLR7833CTRLPBF-VB MOSFET can be used for high-current switch control. Its low on-resistance minimizes heat generation when current passes through, thereby improving the reliability and life of the system.
4. **Consumer Electronics: **
In high-power consumer electronic devices, such as fast chargers and power adapters, this MOSFET can be used as a switching component. Its ultra-low on-resistance can improve power conversion efficiency, reduce energy consumption in power adapters, and extend service life.
The excellent performance of the IRLR7833CTRLPBF-VB MOSFET makes it outstanding in power management, electric vehicle drives, industrial automation and consumer electronic devices, providing efficient and reliable switching solutions for these fields.
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