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IRLR7811WTRPBF-VB Product details
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1. Product Introduction
**IRLR7811WTRPBF-VB** is a high-performance N-channel MOSFET in TO252 package. This MOSFET is designed for high current and low voltage applications, with extremely low on-resistance and excellent switching performance. The maximum drain-source voltage (VDS) is 30V, the gate drive voltage range is ±20V, and the threshold voltage (Vth) is 1.7V. Its on-resistance is 3mΩ at a gate voltage of 4.5V and 2mΩ at a gate voltage of 10V, and it can support a drain current of up to 100A. IRLR7811WTRPBF-VB uses Trench technology, which provides excellent switching speed and low power consumption characteristics, and is suitable for use in a variety of high current applications.
**IRLR7811WTRPBF-VB** is a high-performance N-channel MOSFET in TO252 package. This MOSFET is designed for high current and low voltage applications, with extremely low on-resistance and excellent switching performance. The maximum drain-source voltage (VDS) is 30V, the gate drive voltage range is ±20V, and the threshold voltage (Vth) is 1.7V. Its on-resistance is 3mΩ at a gate voltage of 4.5V and 2mΩ at a gate voltage of 10V, and it can support a drain current of up to 100A. IRLR7811WTRPBF-VB uses Trench technology, which provides excellent switching speed and low power consumption characteristics, and is suitable for use in a variety of high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Device model**: IRLR7811WTRPBF-VB
- **Package type**: TO252
- **Polarity**: N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
- **Maximum power dissipation**: 3.5W (depending on heat dissipation conditions)
- **Maximum junction temperature (Tj)**: 175°C
- **Gate charge (Qg)**: 110nC
- **Switching delay time**:
- Rise time (tr): 25ns
- Fall time (tf): 35ns
- **Device model**: IRLR7811WTRPBF-VB
- **Package type**: TO252
- **Polarity**: N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
- **Maximum power dissipation**: 3.5W (depending on heat dissipation conditions)
- **Maximum junction temperature (Tj)**: 175°C
- **Gate charge (Qg)**: 110nC
- **Switching delay time**:
- Rise time (tr): 25ns
- Fall time (tf): 35ns
Domain and module applications：
3. Applicable fields and modules
The excellent performance of **IRLR7811WTRPBF-VB** makes it very suitable for a variety of high current and low voltage applications:
1. **High-efficiency power management**:
In power management systems, such as DC-DC converters and high-efficiency power switches, the low on-resistance and high current handling capability of IRLR7811WTRPBF-VB can significantly improve conversion efficiency and reduce power consumption. It is suitable for computer power supplies, industrial power modules, and various high-efficiency power solutions.
2. **Electric vehicles and motor control**:
In electric vehicles and motor drive systems, this MOSFET can handle high currents and provide low-power switching operations. It is suitable for battery management systems, DC motor drives, and stepper motor control in electric vehicles to ensure high efficiency and stability of the system.
3. **LED lighting**:
IRLR7811WTRPBF-VB is also suitable for LED drive applications. Its low on-resistance can effectively drive high-brightness LED lamps, ensure stable brightness output and improve the energy efficiency of the system, suitable for commercial and industrial LED lighting solutions.
4. **High-power switching applications**:
Due to its high current carrying capacity and low on-resistance, this MOSFET performs well in high-power switching applications and is suitable for battery management systems and various high-power switching circuits. This feature enables it to handle high-power loads and maintain high efficiency and stability.
5. **Power conversion and inverters**:
IRLR7811WTRPBF-VB is also widely used in power converters and inverters. Its high current handling capability and low on-resistance make it suitable for high-power conversion and inverter systems, supporting efficient power conversion and stable output performance.
In general, the IRLR7811WTRPBF-VB provides a reliable solution in many fields such as high-efficiency power management, electric vehicles, motor control, LED lighting, high-power switching, and power conversion and inverter with its low on-resistance, high current handling capability and excellent switching performance.
The excellent performance of **IRLR7811WTRPBF-VB** makes it very suitable for a variety of high current and low voltage applications:
1. **High-efficiency power management**:
In power management systems, such as DC-DC converters and high-efficiency power switches, the low on-resistance and high current handling capability of IRLR7811WTRPBF-VB can significantly improve conversion efficiency and reduce power consumption. It is suitable for computer power supplies, industrial power modules, and various high-efficiency power solutions.
2. **Electric vehicles and motor control**:
In electric vehicles and motor drive systems, this MOSFET can handle high currents and provide low-power switching operations. It is suitable for battery management systems, DC motor drives, and stepper motor control in electric vehicles to ensure high efficiency and stability of the system.
3. **LED lighting**:
IRLR7811WTRPBF-VB is also suitable for LED drive applications. Its low on-resistance can effectively drive high-brightness LED lamps, ensure stable brightness output and improve the energy efficiency of the system, suitable for commercial and industrial LED lighting solutions.
4. **High-power switching applications**:
Due to its high current carrying capacity and low on-resistance, this MOSFET performs well in high-power switching applications and is suitable for battery management systems and various high-power switching circuits. This feature enables it to handle high-power loads and maintain high efficiency and stability.
5. **Power conversion and inverters**:
IRLR7811WTRPBF-VB is also widely used in power converters and inverters. Its high current handling capability and low on-resistance make it suitable for high-power conversion and inverter systems, supporting efficient power conversion and stable output performance.
In general, the IRLR7811WTRPBF-VB provides a reliable solution in many fields such as high-efficiency power management, electric vehicles, motor control, LED lighting, high-power switching, and power conversion and inverter with its low on-resistance, high current handling capability and excellent switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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