IRLR7811WCPBF-VB Product details
Product introduction:
IRLR7811WCPBF-VB is a high-performance single-N-Channel MOSFET in TO252 package. The main features of this MOSFET include 30V drain-source voltage (VDS), 100A drain current (ID), and extremely low on-resistance, which are 3mΩ (@VGS=4.5V) and 2mΩ (@VGS=10V). Its gate threshold voltage (Vth) is 1.7V and it uses Trench technology. These features make it perform well under high current and low voltage conditions, making it very suitable for high-efficiency power switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench technology
- **Power consumption**: Suitable for high current applications
- **Switching speed**: Suitable for medium and high frequency switching applications
- **Thermal management**: TO252 package provides good heat dissipation performance, suitable for high power density applications
Domain and module applications:
1. **Power switch**: IRLR7811WCPBF-VB can be widely used in power switch modules such as DC-DC converters and power management systems. Due to its low on-resistance and high current handling capability, it can provide efficient and low-power switch control during power conversion to ensure stable system operation.
2. **Motor drive**: In motor drive applications, this MOSFET can be used as a switching element in the motor control circuit to provide reliable current control. Its low RDS(ON) value enables it to effectively reduce power loss, improve the performance and efficiency of the motor, and is suitable for medium-power motor drive systems.
3. **Battery management system**: In battery management systems (BMS), IRLR7811WCPBF-VB can be used as a switching element for battery protection and current control. Due to its high current capability and low on-resistance, it can ensure efficient switch control during battery charging and discharging, improving the safety and reliability of the system.
4. **Automotive electronics**: This MOSFET is suitable for various applications in automotive electronic systems, such as battery management, motor control, and power switching. Its low on-resistance and high current capability enable it to meet the current and power requirements of automotive systems and provide stable switching control.
In summary, the IRLR7811WCPBF-VB is suitable for power switching, motor drive, battery management, and automotive electronics with its 30V drain-source voltage, 100A drain current, and extremely low on-resistance, providing efficient and stable switching solutions for these applications.
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