IRLR7807ZTRPBF-VB Product details
Product introduction:
IRLR7807ZTRPBF-VB is a high-performance single N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 30V, the gate-source voltage (VGS) can reach ±20V, and the gate threshold voltage (Vth) is 1.7V. This MOSFET can also provide low on-resistance at a lower gate-source voltage, with RDS(ON) of 9mΩ (at VGS=4.5V) and 7mΩ (at VGS=10V). With its drain current carrying capacity of up to 70A and Trench technology, the IRLR7807ZTRPBF-VB performs well in handling high current and low voltage applications, effectively reducing power losses and improving overall system efficiency.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Drain current (ID)**: 70A
- **Technology type**: Trench technology
- **Maximum power dissipation (PD)**: 3W
- **Operating temperature range**: -55°C to 175°C
- **Package pins**: Three pins (Drain, Gate, Source)
Domain and module applications:
1. **Power switch**
- IRLR7807ZTRPBF-VB is suitable for high current power switch applications. In power management modules, this MOSFET can be used in the high current switch part of the DC-DC converter. With its low on-resistance and high drain current capability, it can effectively improve the power conversion efficiency, reduce power consumption and stabilize the output current.
2. **Motor drive**
- In motor drive applications, the high current handling capability of IRLR7807ZTRPBF-VB makes it suitable for use as a switching element in motor control circuits. Whether it is a power tool or an electric vehicle drive system, this MOSFET can efficiently control the current, provide stable driving performance and good power efficiency.
3. **Load switch**
- This MOSFET is also suitable for various load switch applications, such as in home appliances and industrial control systems. Its low on-resistance and high current carrying capacity enable it to efficiently control large current loads at low voltages, ensuring the stability and reliability of the system.
4. **Overcurrent protection**
- In the overcurrent protection module, the IRLR7807ZTRPBF-VB can be used as an overcurrent protection switch to help protect the circuit from overcurrent damage. Its high current carrying capacity and low on-resistance enable it to respond quickly to overcurrent conditions and provide effective protection.
The IRLR7807ZTRPBF-VB is a high-performance N-channel MOSFET suitable for low-voltage and high-current applications. With its excellent switching performance and low power consumption, it performs well in multiple fields such as power switching, motor drive, load switching and overcurrent protection.
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