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IRLR7807ZTRPBF-VB Product details

Product introduction:

IRLR7807ZTRPBF-VB MOSFET Product Introduction

IRLR7807ZTRPBF-VB is a high-performance single N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 30V, the gate-source voltage (VGS) can reach ±20V, and the gate threshold voltage (Vth) is 1.7V. This MOSFET can also provide low on-resistance at a lower gate-source voltage, with RDS(ON) of 9mΩ (at VGS=4.5V) and 7mΩ (at VGS=10V). With its drain current carrying capacity of up to 70A and Trench technology, the IRLR7807ZTRPBF-VB performs well in handling high current and low voltage applications, effectively reducing power losses and improving overall system efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 30V 1.7V 70A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 30V 1.7V 70A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 30V 1.7V 70A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
IRLR7807ZTRPBF-VB MOSFET Detailed parameter description

- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Drain current (ID)**: 70A
- **Technology type**: Trench technology
- **Maximum power dissipation (PD)**: 3W
- **Operating temperature range**: -55°C to 175°C
- **Package pins**: Three pins (Drain, Gate, Source)

Domain and module applications:

Applications and module examples

1. **Power switch**
- IRLR7807ZTRPBF-VB is suitable for high current power switch applications. In power management modules, this MOSFET can be used in the high current switch part of the DC-DC converter. With its low on-resistance and high drain current capability, it can effectively improve the power conversion efficiency, reduce power consumption and stabilize the output current.

2. **Motor drive**
- In motor drive applications, the high current handling capability of IRLR7807ZTRPBF-VB makes it suitable for use as a switching element in motor control circuits. Whether it is a power tool or an electric vehicle drive system, this MOSFET can efficiently control the current, provide stable driving performance and good power efficiency.

3. **Load switch**
- This MOSFET is also suitable for various load switch applications, such as in home appliances and industrial control systems. Its low on-resistance and high current carrying capacity enable it to efficiently control large current loads at low voltages, ensuring the stability and reliability of the system.

4. **Overcurrent protection**
- In the overcurrent protection module, the IRLR7807ZTRPBF-VB can be used as an overcurrent protection switch to help protect the circuit from overcurrent damage. Its high current carrying capacity and low on-resistance enable it to respond quickly to overcurrent conditions and provide effective protection.

The IRLR7807ZTRPBF-VB is a high-performance N-channel MOSFET suitable for low-voltage and high-current applications. With its excellent switching performance and low power consumption, it performs well in multiple fields such as power switching, motor drive, load switching and overcurrent protection.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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