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IRLR7807ZCPBF-VB Product details
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IRLR7807ZCPBF-VB Product Introduction
The IRLR7807ZCPBF-VB is a high performance N-channel MOSFET in a TO252 package designed for low to medium voltage applications. Manufactured using Trench technology, this MOSFET has extremely low on-resistance and high current handling capability, making it an excellent performer in circuits that require high efficiency and high current loads. Its low RDS(ON) and high current carrying capability enable it to provide excellent performance and reliability in a variety of power management applications.
The IRLR7807ZCPBF-VB is a high performance N-channel MOSFET in a TO252 package designed for low to medium voltage applications. Manufactured using Trench technology, this MOSFET has extremely low on-resistance and high current handling capability, making it an excellent performer in circuits that require high efficiency and high current loads. Its low RDS(ON) and high current carrying capability enable it to provide excellent performance and reliability in a variety of power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS = 10V
- 9mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 70A
- **Technology**: Trench technology
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS = 10V
- 9mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 70A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management and switching circuits**:
IRLR7807ZCPBF-VB is suitable for power management applications such as DC-DC converters and switching power supply modules. Its extremely low on-resistance and high current handling capability can efficiently switch current and reduce power loss, improving the efficiency of the power system. Especially in low to medium voltage power applications, this MOSFET can provide excellent performance to ensure the stability and reliability of the power system.
2. **Motor drive**:
In motor drive applications, IRLR7807ZCPBF-VB can be used as a switching element in motor control circuits. Due to its high current handling capability and low RDS(ON), this MOSFET can efficiently control the start and stop and speed regulation of the motor, and is suitable for various motor drive scenarios to ensure the stability and efficiency of the motor operation.
3. **Load switch**:
This MOSFET is also suitable for load switching applications such as lighting control and heating element control. The low on-resistance and high current carrying capacity of IRLR7807ZCPBF-VB can switch loads efficiently, reduce energy loss, and provide reliable switching control, suitable for various high-power load application scenarios.
4. **Power regulation and protection circuit**:
IRLR7807ZCPBF-VB can be used in power regulation and protection circuits, such as overcurrent protection and voltage regulation modules. Its low RDS(ON) and high current handling capability can effectively protect the circuit from overcurrent or overvoltage damage, while improving the stability and safety of the system and ensuring the long-term reliable operation of circuit components.
1. **Power management and switching circuits**:
IRLR7807ZCPBF-VB is suitable for power management applications such as DC-DC converters and switching power supply modules. Its extremely low on-resistance and high current handling capability can efficiently switch current and reduce power loss, improving the efficiency of the power system. Especially in low to medium voltage power applications, this MOSFET can provide excellent performance to ensure the stability and reliability of the power system.
2. **Motor drive**:
In motor drive applications, IRLR7807ZCPBF-VB can be used as a switching element in motor control circuits. Due to its high current handling capability and low RDS(ON), this MOSFET can efficiently control the start and stop and speed regulation of the motor, and is suitable for various motor drive scenarios to ensure the stability and efficiency of the motor operation.
3. **Load switch**:
This MOSFET is also suitable for load switching applications such as lighting control and heating element control. The low on-resistance and high current carrying capacity of IRLR7807ZCPBF-VB can switch loads efficiently, reduce energy loss, and provide reliable switching control, suitable for various high-power load application scenarios.
4. **Power regulation and protection circuit**:
IRLR7807ZCPBF-VB can be used in power regulation and protection circuits, such as overcurrent protection and voltage regulation modules. Its low RDS(ON) and high current handling capability can effectively protect the circuit from overcurrent or overvoltage damage, while improving the stability and safety of the system and ensuring the long-term reliable operation of circuit components.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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