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IRLR3815TRPBF-VB Product details

Product introduction:

IRLR3815TRPBF-VB MOSFET Product Introduction

The IRLR3815TRPBF-VB is a high performance N-channel power MOSFET in a TO252 package. Designed for applications requiring high current and low on-resistance, this MOSFET has a maximum drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 58A. Its threshold voltage (Vth) is 2.5V, making it suitable for a variety of switching applications. The IRLR3815TRPBF-VB uses Trench technology, has excellent switching performance and thermal management capabilities, and can operate stably in high current and high voltage environments.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 60V 2.5V 58A 10mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 60V 2.5V 58A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 60V 2.5V 58A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description

- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 58A
- **Technology type**: Trench technology
- **Maximum power consumption**: Should be managed according to actual heat dissipation design
- **Operating temperature range**: -55°C to 175°C

Domain and module applications:

Applications and modules

1. **Power management and DC-DC converters**: In power management and DC-DC converters, the low on-resistance and high current capability of the IRLR3815TRPBF-VB enable it to effectively improve conversion efficiency and reduce power consumption. It is suitable for applications that require high-efficiency power conversion.

2. **Load switch**: The high drain current capability and low on-resistance of this MOSFET make it an ideal choice for load switching. It can efficiently control current and reduce power consumption, making it ideal for applications such as motor drive, power switch, and relay drive.

3. **LED drive circuit**: The IRLR3815TRPBF-VB can be used in high-power LED drive circuits. Its excellent on-resistance and high current handling capability ensure the stability and high efficiency of the LED system, making it suitable for LED applications that require high brightness and long life.

4. **Automotive Electronic Systems**: In automotive electronic systems, the high current handling capability and low RDS(ON) of the IRLR3815TRPBF-VB make it suitable for applications such as battery management, power distribution, and power window control. It can provide stable performance in automotive electrical systems.

5. **Industrial Control and Automation**: In industrial control and automation systems, the high current capability and good switching performance of this MOSFET make it suitable for switching motor control and other high current loads. It can improve the efficiency and reliability of the system.

In short, the IRLR3815TRPBF-VB is an N-channel MOSFET suitable for high current and low on-resistance applications. Its excellent performance makes it perform well in power management, load switching, LED driving, automotive electronics, and industrial control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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