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IRLR3717TRPBF-VB Product details

Product introduction:

1. Product Introduction:
IRLR3717TRPBF-VB is a high-performance single N-channel MOSFET in a TO252 package. It utilizes advanced Trench technology and is particularly suitable for applications requiring high switching efficiency and low on-resistance. This MOSFET has a drain-source withstand voltage (VDS) of 20V and is suitable for use in medium and low voltage circuits. Its threshold voltage (Vth) ranges from 0.5V to 1.5V, enabling efficient switching operation at low gate voltages. The on-resistance of the IRLR3717TRPBF-VB is 3.5mΩ at a gate voltage of 2.5V and 2.5mΩ at a gate voltage of 4.5V, supporting a maximum drain current of 120A. These features make this MOSFET excel in applications requiring high current, low power consumption, and high switching speeds.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 20V 0.5~1.5V 120A 3.5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 20V 0.5~1.5V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 20V 0.5~1.5V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. Detailed parameter description:
- **Model**: IRLR3717TRPBF-VB
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source withstand voltage (VDS)**: 20V
- **Gate-source withstand voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 3.5mΩ @ VGS=2.5V
- 2.5mΩ @ VGS=4.5V
- **Drain current (ID)**: 120A
- **Technology**: Trench

Domain and module applications:

3. Application fields and modules:
- **High-efficiency power converters**: The ultra-low on-resistance and high current capability of the IRLR3717TRPBF-VB make it very suitable for use in high-efficiency power converters such as DC-DC converters and power management modules. It can reduce power loss, improve conversion efficiency, and achieve high-performance power management.

- **Motor drive circuit**: In motor drive circuits, this MOSFET can be used as an efficient switching element to handle high current loads. Due to its low on-resistance, it can provide less energy loss in motor drive applications and improve the overall efficiency of the system.

- **Automation control system**: The IRLR3717TRPBF-VB is suitable for high-current switching needs in various automation control systems, such as electric actuators and drive control modules. Its high switching speed and low power consumption characteristics ensure the response time and operating efficiency of the system.

- **Battery management system**: In battery management systems, this MOSFET is used to control the charging and discharging process. Low on-resistance and high current capability help improve system efficiency, optimize battery performance and extend battery life.

- **Power Regulation and Protection**: IRLR3717TRPBF-VB can also be used in power regulation and protection circuits, such as overcurrent protection and load switching. Its high switching capability and low on-resistance enable it to achieve efficient and reliable performance in various protection circuits.

The design goal of IRLR3717TRPBF-VB is to meet the application requirements of high current, high switching efficiency and low power consumption, and is widely used in power management, motor drive, battery management, automation control and power protection.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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