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IRLR3717TRLPBF-VB Product details
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IRLR3717TRLPBF-VB MOSFET Product Introduction
IRLR3717TRLPBF-VB is a high-performance single N-channel power MOSFET in TO252 package. Designed for high current and low voltage applications, this MOSFET has a drain-source voltage (VDS) of 20V and a maximum drain current (ID) of 120A. Its gate-source voltage (VGS) is rated at ±20V, accommodating a wide range of drive voltages. The IRLR3717TRLPBF-VB uses Trench technology and has an ultra-low on-resistance of 3.5mΩ at VGS of 2.5V and 2.5mΩ at VGS of 4.5V. This gives it extremely low power consumption and high efficiency under high current loads, making it suitable for applications requiring high current handling.
IRLR3717TRLPBF-VB is a high-performance single N-channel power MOSFET in TO252 package. Designed for high current and low voltage applications, this MOSFET has a drain-source voltage (VDS) of 20V and a maximum drain current (ID) of 120A. Its gate-source voltage (VGS) is rated at ±20V, accommodating a wide range of drive voltages. The IRLR3717TRLPBF-VB uses Trench technology and has an ultra-low on-resistance of 3.5mΩ at VGS of 2.5V and 2.5mΩ at VGS of 4.5V. This gives it extremely low power consumption and high efficiency under high current loads, making it suitable for applications requiring high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
IRLR3717TRLPBF-VB MOSFET Detailed parameter description
- **Device type**: N-channel MOSFET
- **Package**: TO252
- **Configuration**: Single channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 3.5mΩ @ VGS = 2.5V
- 2.5mΩ @ VGS = 4.5V
- **Drain current (ID)**: 120A
- **Technology**: Trench technology
- **Power consumption**: Low power consumption, suitable for high current applications
- **Thermal resistance**: Optimized package design contributes to efficient thermal management and ensures device stability
- **Device type**: N-channel MOSFET
- **Package**: TO252
- **Configuration**: Single channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 3.5mΩ @ VGS = 2.5V
- 2.5mΩ @ VGS = 4.5V
- **Drain current (ID)**: 120A
- **Technology**: Trench technology
- **Power consumption**: Low power consumption, suitable for high current applications
- **Thermal resistance**: Optimized package design contributes to efficient thermal management and ensures device stability
Domain and module applications：
Applications and Modules
1. **High-efficiency power switch**: The IRLR3717TRLPBF-VB is ideal for high-efficiency power switch applications due to its extremely low on-resistance and high current handling capability. In switching power supplies and power management modules, this MOSFET can effectively control the power switch, reduce power consumption, and improve system efficiency.
2. **DC-DC converter**: In DC-DC converters, the low on-resistance of this MOSFET enables it to provide stable current control, reduce energy loss, and thus improve conversion efficiency. It is suitable for high-power converters and high-efficiency power conversion applications.
3. **Motor drive**: The high current handling capability of the IRLR3717TRLPBF-VB makes it ideal for motor drive systems, such as motor control in power tools, electric vehicles, and home appliances. Its low on-resistance can support the high current load of the motor and ensure smooth operation of the motor.
4. **LED lighting**: In LED lighting systems, MOSFETs can be used as switching elements to control the current of the LED. Due to its ultra-low on-resistance and high current capability, this MOSFET can efficiently drive LEDs, improving brightness and system efficiency.
5. **Automotive electronics**: This MOSFET is also suitable for power switching and current control applications in automotive electronics. For example, in the power management system of a car, the IRLR3717TRLPBF-VB can achieve efficient current control, improving the performance and reliability of on-board electronic equipment.
The low on-resistance and high current capability of the IRLR3717TRLPBF-VB give it a significant advantage in these areas and is ideal for handling low voltage, high current loads.
1. **High-efficiency power switch**: The IRLR3717TRLPBF-VB is ideal for high-efficiency power switch applications due to its extremely low on-resistance and high current handling capability. In switching power supplies and power management modules, this MOSFET can effectively control the power switch, reduce power consumption, and improve system efficiency.
2. **DC-DC converter**: In DC-DC converters, the low on-resistance of this MOSFET enables it to provide stable current control, reduce energy loss, and thus improve conversion efficiency. It is suitable for high-power converters and high-efficiency power conversion applications.
3. **Motor drive**: The high current handling capability of the IRLR3717TRLPBF-VB makes it ideal for motor drive systems, such as motor control in power tools, electric vehicles, and home appliances. Its low on-resistance can support the high current load of the motor and ensure smooth operation of the motor.
4. **LED lighting**: In LED lighting systems, MOSFETs can be used as switching elements to control the current of the LED. Due to its ultra-low on-resistance and high current capability, this MOSFET can efficiently drive LEDs, improving brightness and system efficiency.
5. **Automotive electronics**: This MOSFET is also suitable for power switching and current control applications in automotive electronics. For example, in the power management system of a car, the IRLR3717TRLPBF-VB can achieve efficient current control, improving the performance and reliability of on-board electronic equipment.
The low on-resistance and high current capability of the IRLR3717TRLPBF-VB give it a significant advantage in these areas and is ideal for handling low voltage, high current loads.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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