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IRLR3715ZCTRPBF-VB Product details

Product introduction:

IRLR3715ZCTRPBF-VB MOSFET Product Introduction

IRLR3715ZCTRPBF-VB is a high-performance single N-channel MOSFET in TO252 package type. It is designed for high current and low voltage applications with excellent switching performance and low on-resistance. The MOSFET supports a drain-source voltage (VDS) of up to 20V and a gate-source voltage (VGS) of ±20V, and has a wide range of gate threshold voltage (Vth), ranging from 0.5V to 1.5V. The on-resistance of the IRLR3715ZCTRPBF-VB is 6mΩ (at VGS=2.5V) and 4.5mΩ (at VGS=4.5V), and it can handle a drain current of up to 100A. Using Trench technology, this MOSFET can provide extremely low conduction losses and excellent switching performance in low voltage applications, and is very suitable for scenarios requiring high current and high efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 20V 0.5~1.5V 100A 6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 20V 0.5~1.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 20V 0.5~1.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
IRLR3715ZCTRPBF-VB MOSFET Detailed parameter description

- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
- **Drain current (ID)**: 100A
- **Technology type**: Trench technology
- **Maximum power dissipation (PD)**: 3.3W
- **Operating temperature range**: -55°C To 175°C
- **Package Pins**: Three pins (Drain, Gate, Source)

Domain and module applications:

Applications and Module Examples

1. **High Current Switch**
- The IRLR3715ZCTRPBF-VB is suitable for applications that require high current switching, such as high-power LED drive circuits and motor control systems. Its high drain current handling capability and low on-resistance make it an ideal choice for these applications, enabling efficient current control and reduced power loss.

2. **Power Management**
- In power management systems, the IRLR3715ZCTRPBF-VB can be used for high current switching power supplies and DC-DC converters. Its low on-resistance and high current carrying capacity can effectively improve the efficiency of the power supply, reduce energy loss, and enhance the performance of the overall system.

3. **Load Switch**
- This MOSFET is also suitable for a variety of load switching applications, such as switch control in home appliances and industrial equipment. Its wide gate threshold voltage range and low on-resistance enable it to provide stable switching performance in a low voltage environment and maintain low power consumption when controlling high current loads.

4. **Motor Drive**
- IRLR3715ZCTRPBF-VB is also very suitable for motor drive systems. Its high current handling capability and low on-resistance enable it to efficiently drive motors, suitable for power tools, electric vehicles and other motor control applications, providing efficient motor control and speed regulation.

IRLR3715ZCTRPBF-VB is an N-channel MOSFET with high current handling capability and low on-resistance, suitable for a variety of applications such as high current switching, power management, load switching and motor drive, providing efficient and reliable switching solutions for modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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