IRLR3715TRRPBF-VB Product details
Product introduction:
**IRLR3715TRRPBF-VB** is a high-performance N-Channel MOSFET packaged in TO252. This MOSFET uses Trench technology and has extremely low on-resistance and ultra-high current carrying capacity, making it very suitable for high-performance and high-reliability circuit design. Its maximum drain-source voltage (V_DS) is 20V and its gate-source voltage (V_GS) is ±20V, which can provide excellent conduction performance at low gate drive voltage. The on-resistance (R_DS(ON)) is 6mΩ (@V_GS=2.5V) and 4.5mΩ (@V_GS=4.5V), and the maximum drain current (I_D) is up to 100A, making it excellent in high current and low power consumption applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (V_DS)**: 20V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 0.5~1.5V
- **On-resistance (R_DS(ON))**:
- 6mΩ @ V_GS=2.5V
- 4.5mΩ @ V_GS=4.5V
- **Maximum drain current (I_D)**: 100A
- **Technology**: Trench
Domain and module applications:
The excellent performance of **IRLR3715TRRPBF-VB** makes it suitable for multiple fields and modules:
1. **Power management**:
- In the field of power management, especially in high current DC-DC converters and power regulation modules, the ultra-low on-resistance and high current capability of this MOSFET can significantly improve energy efficiency, reduce power consumption and heat generation. This makes it very suitable for use in high-efficiency power management and battery management systems, improving system stability and overall performance.
2. **Power switching**:
- Due to its high current carrying capacity and low on-resistance, IRLR3715TRRPBF-VB is an ideal choice for power switching applications, such as motor drives, electromagnetic relays, and load switching systems. Its high current handling capability and high conduction efficiency can ensure efficient switching operation and load control, adapting to high current requirements in various industrial and consumer electronics applications.
3. **Automotive Electronics**:
- In automotive electronic systems such as battery management systems, seat adjusters and power windows, this MOSFET provides reliable switching control and can handle high current loads. Its high current handling capability and low on-resistance are suitable for operation in the automotive environment, ensuring high efficiency and long-term durability of automotive electronic devices.
4. **Consumer Electronics**:
- In consumer electronic products such as smartphones, tablets and home appliances, the low on-resistance of the IRLR3715TRRPBF-VB can improve energy efficiency and reduce power consumption. Especially in applications with strict requirements on power management, this MOSFET can significantly improve the operating efficiency of the device, extend battery life and overall service life.
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