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IRLR3303PBF-VB Product details
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Product Introduction
**IRLR3303PBF-VB** is a high-performance N-Channel MOSFET packaged in TO252. It uses Trench technology, has extremely low on-resistance and high current carrying capacity, and is very suitable for high-performance and high-reliability applications. Its maximum drain-source voltage (V_DS) is 30V, and the gate-source voltage (V_GS) is ±20V, which can provide excellent conduction performance at low gate drive voltage. The on-resistance (R_DS(ON)) of this MOSFET is 9mΩ (@V_GS=4.5V) and 7mΩ (@V_GS=10V), and the maximum drain current (I_D) is 70A, which is suitable for high-current applications to improve system efficiency and stability.
**IRLR3303PBF-VB** is a high-performance N-Channel MOSFET packaged in TO252. It uses Trench technology, has extremely low on-resistance and high current carrying capacity, and is very suitable for high-performance and high-reliability applications. Its maximum drain-source voltage (V_DS) is 30V, and the gate-source voltage (V_GS) is ±20V, which can provide excellent conduction performance at low gate drive voltage. The on-resistance (R_DS(ON)) of this MOSFET is 9mΩ (@V_GS=4.5V) and 7mΩ (@V_GS=10V), and the maximum drain current (I_D) is 70A, which is suitable for high-current applications to improve system efficiency and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 9mΩ @ V_GS=4.5V
- 7mΩ @ V_GS=10V
- **Maximum drain current (I_D)**: 70A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 9mΩ @ V_GS=4.5V
- 7mΩ @ V_GS=10V
- **Maximum drain current (I_D)**: 70A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
The performance characteristics of **IRLR3303PBF-VB** make it suitable for a variety of fields and modules:
1. **Power management**:
- In power management systems, such as DC-DC converters and power regulation modules, the low on-resistance and high current capability of this MOSFET can effectively improve energy efficiency, reduce power consumption and heat generation. This makes it very suitable for high-efficiency power conversion and battery management applications to ensure the stability and efficiency of the power system.
2. **Power switching**:
- Due to its high current carrying capability and low on-resistance, the IRLR3303PBF-VB is very suitable for various power switching applications such as motor drives, electromagnetic relay switches and load switching. It can handle high current loads and provide reliable switching functions to improve system reliability and performance.
3. **Automotive Electronics**:
- In automotive electronic systems such as battery management systems, power windows, seat adjusters, etc., the IRLR3303PBF-VB can provide reliable switching control and handle high current loads. Its high current handling capability and low on-resistance enable it to operate stably in the automotive environment, improving the performance and durability of automotive electronic devices.
4. **Consumer Electronics**:
- In consumer electronics such as smartphones, tablets, and home appliances, the low on-resistance of the IRLR3303PBF-VB can improve the energy efficiency of the device and reduce power consumption. Especially in applications with strict requirements for power management, this MOSFET can improve the performance of the device and extend battery life and overall service life.
The performance characteristics of **IRLR3303PBF-VB** make it suitable for a variety of fields and modules:
1. **Power management**:
- In power management systems, such as DC-DC converters and power regulation modules, the low on-resistance and high current capability of this MOSFET can effectively improve energy efficiency, reduce power consumption and heat generation. This makes it very suitable for high-efficiency power conversion and battery management applications to ensure the stability and efficiency of the power system.
2. **Power switching**:
- Due to its high current carrying capability and low on-resistance, the IRLR3303PBF-VB is very suitable for various power switching applications such as motor drives, electromagnetic relay switches and load switching. It can handle high current loads and provide reliable switching functions to improve system reliability and performance.
3. **Automotive Electronics**:
- In automotive electronic systems such as battery management systems, power windows, seat adjusters, etc., the IRLR3303PBF-VB can provide reliable switching control and handle high current loads. Its high current handling capability and low on-resistance enable it to operate stably in the automotive environment, improving the performance and durability of automotive electronic devices.
4. **Consumer Electronics**:
- In consumer electronics such as smartphones, tablets, and home appliances, the low on-resistance of the IRLR3303PBF-VB can improve the energy efficiency of the device and reduce power consumption. Especially in applications with strict requirements for power management, this MOSFET can improve the performance of the device and extend battery life and overall service life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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