Featured Model

Last updated:

IRLR3103TR-VB Product details

Product introduction:

1. Product Introduction

**IRLR3103TR-VB** is a high-performance N-channel MOSFET in TO252 package, designed for high current applications. Its maximum drain-source voltage (VDS) is 30V, the gate drive voltage range is ±20V, and the threshold voltage (Vth) is 1.7V. At a gate drive voltage of 10V, its on-resistance is 5mΩ and supports a maximum drain current of 80A. IRLR3103TR-VB uses Trench technology, has very low on-resistance and excellent switching performance, and is suitable for high current, low voltage applications.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 30V 1.7V 80A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 30V 1.7V 80A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 30V 1.7V 80A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. Detailed parameter description

- **Device model**: IRLR3103TR-VB
- **Package type**: TO252
- **Polarity**: N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 80A
- **Technology**: Trench
- **Maximum power dissipation**: 2.5W (depending on heat dissipation conditions)
- **Maximum junction temperature (Tj)**: 175°C
- **Gate charge (Qg)**: 80nC
- **Switching delay time**:
- Rise time (tr): 50ns
- Fall time (tf): 40ns

Domain and module applications:

3. Applicable fields and modules

**IRLR3103TR-VB**'s low on-resistance and high current carrying capacity make it excellent in a variety of applications requiring high current and low voltage:

1. **Power management system**: In power management systems, IRLR3103TR-VB's low on-resistance and high current capability make it very suitable for high-efficiency DC-DC converters and load switches. Its excellent switching performance can improve power efficiency, reduce power consumption, and improve system stability, and is suitable for computer power supplies, server power supplies, and other high-efficiency power systems.

2. **Motor drive**: In motor drive applications, such as stepper motors and brushless DC motor drives, IRLR3103TR-VB can handle high currents and stably control the switching of motors. Its low on-resistance helps reduce power consumption and heat, and is suitable for industrial robots, electric vehicles, and other high-power motor applications.

3. **Automotive electronics**: In automotive electronic systems, the IRLR3103TR-VB can efficiently control load switches for power windows, seat adjusters, and lighting systems. Its high current capability and low on-resistance ensure the reliability and efficiency of automotive electrical systems.

4. **Power amplifier**: In power amplifier circuits, the low on-resistance and high current handling capability of this MOSFET make it suitable for high-power applications. It can be used as an efficient switching element to improve performance and reduce power consumption in power amplifiers, suitable for RF amplifiers and high-power audio amplifiers.

5. **Battery management system**: In battery management systems, the high current capability and low on-resistance of the IRLR3103TR-VB are suitable for battery protection and balancing. It can effectively manage the battery's charge and discharge process, ensuring battery safety and performance, and is suitable for electric vehicles, energy storage systems, and other battery applications that require high current.

In summary, the low on-resistance and high current handling capability of IRLR3103TR-VB make it widely used in power management, motor drive, automotive electronics, power amplifiers, and battery management. It can meet the application requirements of high current and low voltage, providing efficient and reliable solutions for electronic design in these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat