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IRLR2703TRPBF-VB Product details
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Product Introduction
**IRLR2703TRPBF-VB** is a high-performance N-Channel MOSFET in TO252 package. It uses Trench technology, has ultra-low on-resistance and high current carrying capacity, and is very suitable for circuit designs that require high performance and high reliability. The drain-source voltage (V_DS) of this MOSFET is 30V, and the gate-source voltage (V_GS) is ±20V, which can achieve excellent conduction performance at low gate drive voltage. Its on-resistance (R_DS(ON)) is 9mΩ (@V_GS=4.5V) and 7mΩ (@V_GS=10V), and the maximum drain current (I_D) is 70A, making it particularly suitable for high current applications.
**IRLR2703TRPBF-VB** is a high-performance N-Channel MOSFET in TO252 package. It uses Trench technology, has ultra-low on-resistance and high current carrying capacity, and is very suitable for circuit designs that require high performance and high reliability. The drain-source voltage (V_DS) of this MOSFET is 30V, and the gate-source voltage (V_GS) is ±20V, which can achieve excellent conduction performance at low gate drive voltage. Its on-resistance (R_DS(ON)) is 9mΩ (@V_GS=4.5V) and 7mΩ (@V_GS=10V), and the maximum drain current (I_D) is 70A, making it particularly suitable for high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 9mΩ @ V_GS=4.5V
- 7mΩ @ V_GS=10V
- **Maximum drain current (I_D)**: 70A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 9mΩ @ V_GS=4.5V
- 7mΩ @ V_GS=10V
- **Maximum drain current (I_D)**: 70A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
The excellent performance of **IRLR2703TRPBF-VB** makes it suitable for multiple fields and modules:
1. **Power management**:
- In the field of power management, especially in DC-DC converters, this MOSFET can significantly improve the efficiency of power conversion, reduce power consumption and heat generation due to its ultra-low on-resistance. This makes it perform well in power modules and battery management systems, and can effectively improve the overall performance of the system.
2. **Power switch**:
- Due to its high current carrying capacity, IRLR2703TRPBF-VB is particularly suitable for various power switching applications such as motor drives, load switches and power distribution systems. Its high withstand voltage and low on-resistance enable it to handle high current loads, ensuring the reliability and efficiency of switching operations.
3. **Automotive electronics**:
- In automotive electronic systems such as battery management systems, power windows and seat adjusters, this MOSFET is able to handle high currents and provide reliable switching functions. Its high current capability and low on-resistance can cope with the harsh conditions in the automotive environment and improve the overall performance and durability of automotive electronic systems.
4. **Consumer Electronics**:
- In the field of consumer electronics, such as portable devices and home appliances, the low on-resistance and high current capability of the IRLR2703TRPBF-VB can improve energy efficiency and reduce power consumption. Especially in applications with high requirements for power management, this MOSFET can help improve the operating efficiency and extend the service life of the equipment.
The excellent performance of **IRLR2703TRPBF-VB** makes it suitable for multiple fields and modules:
1. **Power management**:
- In the field of power management, especially in DC-DC converters, this MOSFET can significantly improve the efficiency of power conversion, reduce power consumption and heat generation due to its ultra-low on-resistance. This makes it perform well in power modules and battery management systems, and can effectively improve the overall performance of the system.
2. **Power switch**:
- Due to its high current carrying capacity, IRLR2703TRPBF-VB is particularly suitable for various power switching applications such as motor drives, load switches and power distribution systems. Its high withstand voltage and low on-resistance enable it to handle high current loads, ensuring the reliability and efficiency of switching operations.
3. **Automotive electronics**:
- In automotive electronic systems such as battery management systems, power windows and seat adjusters, this MOSFET is able to handle high currents and provide reliable switching functions. Its high current capability and low on-resistance can cope with the harsh conditions in the automotive environment and improve the overall performance and durability of automotive electronic systems.
4. **Consumer Electronics**:
- In the field of consumer electronics, such as portable devices and home appliances, the low on-resistance and high current capability of the IRLR2703TRPBF-VB can improve energy efficiency and reduce power consumption. Especially in applications with high requirements for power management, this MOSFET can help improve the operating efficiency and extend the service life of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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