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IRLR120TRPBF-VB Product details

Product introduction:

IRLR120TRPBF-VB MOSFET Product Introduction

IRLR120TRPBF-VB is a high-performance N-channel power MOSFET in TO252 package, designed for medium voltage and current applications. This MOSFET has a maximum drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) of ±20V, and supports a drain current of up to 15A. The on-resistance of IRLR120TRPBF-VB is 114mΩ at VGS=10V, which can effectively reduce power loss and heat generation. Using advanced Trench technology, this MOSFET provides excellent switching performance and reliable thermal management, and is suitable for a variety of applications requiring high voltage resistance and high efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 100V 1.8V 15A 114mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 100V 1.8V 15A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 100V 1.8V 15A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description

- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 114mΩ @ VGS=10V
- **Maximum drain current (ID)**: 15A
- **Technology type**: Trench technology
- **Maximum power consumption**: Based on the specific heat dissipation design, the power consumption should be managed according to the actual application scenario.
- **Operating temperature range**: -55°C to 175°C

Domain and module applications:

Applications and modules

1. **Power management**: IRLR120TRPBF-VB is very suitable for power management and converter applications. Its high voltage and medium current capability make it suitable for DC-DC converters, power switches and other power management modules, providing efficient power conversion and voltage regulation.

2. **Load switch**: In load switch applications, the high voltage and reliability of IRLR120TRPBF-VB enable it to effectively control a variety of current loads. This makes it suitable for use in motor drive, relay control and other load switching circuits.

3. **LED drive circuit**: This MOSFET is suitable for switch control and current regulation in LED drivers. Its high voltage handling capability and good switching performance help stabilize LED light sources and improve system efficiency and reliability.

4. **Automotive electronics**: In automotive electronic systems such as battery management, lighting control and power systems, IRLR120TRPBF-VB provides high voltage and high current handling capabilities to meet the various challenges in the automotive environment.

5. **Industrial Control**: In industrial automation and control systems, this MOSFET can be used to drive relays, control motors and switch circuits. Its high voltage and current handling capabilities ensure the stability and reliability of the system.

In short, IRLR120TRPBF-VB is an N-channel MOSFET suitable for medium voltage and current applications. Its high withstand voltage, low on-resistance and excellent switching performance make it perform well in power management, load switching, LED driving, automotive electronics and industrial control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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